Robust functionality for memory management associated with high-temperature storage and other conditions
AssigneeMicron Technology, Inc.
InventorsAngelo Visconti, Jonathan J. Strand
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AssigneeMicron Technology, Inc.
InventorsAngelo Visconti, Jonathan J. Strand
Estimating the term…
Methods, systems, and devices for robust functionality for memory management associated with high-temperature storage are described. A memory device may apply a pattern (e.g., an imprint conditioning or deletion pattern) to at least a portion of memory cells of a memory array associated with a memory device before or after a power state procedure. The memory device may determine the pattern from various possible patterns, where the pattern may indicate a data state for each memory cell of the portion of memory cells. The pattern may indicate a same data state for each memory cell, an alternating data state for each memory cell, or an asymmetric switching pattern over a plurality of cycles, or any combination thereof. The memory device may write a respective logic value to at least some of the one or more memory cells of the portion of memory cells according to the pattern.
A method, comprising:
A method, comprising:
An apparatus, comprising:
Dependencies are inferred from the claim text.