Matching process controllers for improved matching of process

A non-transitory machine-readable storage medium storing instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• identifying first parameters of a first processing chamber of a semiconductor fabrication facility, the first parameters comprising first input parameters and first output parameters;
• identifying second parameters of a second processing chamber of the semiconductor fabrication facility, the second parameters comprising second input parameters and second output parameters;
• generating, based on the first parameters and the second parameters, composite parameters comprising composite input parameters comprising process conditions and composite output parameters comprising metrology values;
• generating third parameters by adjusting the first parameters, wherein the third parameters more closely approximate the composite parameters than the first parameters;
• generating fourth parameters by adjusting the second parameters, wherein the fourth parameters more closely approximate the composite parameters than the second parameters;
• and
• fabricating first semiconductors in the first processing chamber based on the third parameters and fabricating second semiconductors in the second processing chamber based on the fourth parameters, wherein the fabricating of the first semiconductors in the first processing chamber based on the third parameters corresponds to lower yield loss than corresponding fabrication of corresponding semiconductors in the first processing chamber based on the first parameters, and the fabricating of the second semiconductors in the second processing chamber based on the fourth parameters corresponds to lower yield loss than respective fabrication of respective semiconductors in the second processing chamber based on the second parameters.

A system comprising:

• a memory;
• and
• a processing device coupled to the memory, the processing device to:
• identify first parameters of a first processing chamber of a semiconductor fabrication facility, the first parameters comprising first input parameters and first output parameters;
• identify second parameters of a second processing chamber of the semiconductor fabrication facility, the second parameters comprising second input parameters and second output parameters;
• generate, based on the first parameters and the second parameters, composite parameters comprising composite input parameters associated with process conditions and composite output parameters associated with metrology values;
• generate third parameters by adjusting the first parameters, wherein the third parameters more closely approximate the composite parameters;
• generate fourth parameters by adjusting the second parameters to more closely approximate the composite parameters;
• and
• fabricate first semiconductors in the first processing chamber based on the third parameters and fabricate second semiconductors in the second processing chamber based on the fourth parameters, wherein fabricating the first semiconductors in the first processing chamber based on the third parameters corresponds to lower yield loss than corresponding fabrication of corresponding semiconductors in the first processing chamber based on the first parameters, and fabricating of the second semiconductors in the second processing chamber based on the fourth parameters corresponds to lower yield loss than respective fabrication of respective semiconductors in the second processing chamber based on the second parameters.