Perovskite thick film, preparation method thereof, and radiation detector comprising the same
AssigneeIndustrial Technology Research Institute
InventorsKuo-Wei Huang, Jen-An Chen, Yung-Liang Tung
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Abstract
The present disclosure provides a radiation detector, including a substrate, a pixel array formed on the substrate, a perovskite thick film formed on the pixel array and having a cubic crystal phase, a first electrode formed on the perovskite thick film and is opposite to the pixel array, and a readout circuit. The radiation detector has significantly reduced dark current density and high sensing sensitivity. The present disclosure also provides a method for preparing the perovskite thick film.
Claims24
A radiation detector, comprising:
- a substrate;
- a pixel array formed on the substrate;
- a perovskite thick film with a cubic phase formed on the pixel array;
- a first electrode formed on the perovskite thick film and is opposite to the pixel array;
- and
- a readout circuit,
- wherein the perovskite thick film is formed by a perovskite having a chemical formula ABX3;
- A is a monovalent cation selected from the group consisting of substituted or unsubstituted ammonium ions, substituted or unsubstituted amidine ions, Cs+, Rb+, Li+ and Na+;
- B is a divalent cation selected from the group consisting of Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+, and Eu2+;
- and
- X is a monovalent anion each independently selected from the group consisting of F−, Cl−, Br−, I−, SCN− and OCN−,
- wherein the perovskite thick film comprises a crown ether compound, and the crown ether compound is at least one selected from the group consisting of 12-crown-4, 15-crown-5, 18-crown-6, 21-crown-7, 24-crown-8, and 30-crown-10.
A method for preparing a perovskite thick film, comprising:
- a) providing a perovskite precursor solution;
- b) spraying the perovskite precursor solution on a substrate, and heating the substrate to form a perovskite film;
- c) repeating b) to form a perovskite thick film;
- d) surface treating the perovskite thick film with a surface treatment solvent having the same composition as the solvent in the perovskite precursor solution;
- e) annealing the perovskite thick film;
- and
- f) slowly cooling the perovskite thick film,
- wherein the perovskite thick film is formed by a perovskite having a chemical formula ABX3;
- A is a monovalent cation selected from the group consisting of substituted or unsubstituted ammonium ions, substituted or unsubstituted amidine ions, Cs+, Rb+, Li+ and Na+;
- B is a divalent cation selected from a group consisting of Ca2+, Sr2+, Cd2+, Cu2+, Ni2+, Mn2+, Fe2+, Co2+, Pd2+, Ge2+, Sn2+, Pb2+, Yb2+, and Eu2+;
- and
- X is a monovalent anion each independently selected from the group consisting of F−, Cl−, Br−, I−, SCN− and OCN−,
- wherein the perovskite film comprises a crown ether compound, and the crown ether compound is at least one selected from the group consisting of 12-crown-4, 15-crown-5, 18-crown-6, 21-crown-7, 24-crown-8, and 30-crown-10.
Dependencies are inferred from the claim text.