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US 12,264,274 B2Granted
Beta-sialon phosphor and light emitting device
AssigneeDenka Company Limited
InventorsTomohiro Nomiyama, Manabu Kobayashi, Masaru Miyazaki, Tatsuya Okuzono
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Abstract
A europium-doped β-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P80 [at %], P8/P80≤0.9 is satisfied. A light emitting device containing this β-sialon phosphor.
Claims8
A europium-doped β-sialon phosphor,
- wherein an atomic percentage of an aluminum element to all elements at a depth of 8 nm from a surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P(Al)8, an atomic percentage of an aluminum element to all elements at a depth of 80 nm from the surface of the phosphor is indicated by P(Al)80, and wherein
- P(Al)8/P(Al)80 is ≤0.8,
- the P(Al)8 is from 0.3 or more to 0.8 or less, and
- the β-sialon phosphor is represented by general formula Si6-ZAlZOZN8-Z:Eu2+ (0<Z≤4.2).
1 more element
Dependencies are inferred from the claim text.