US 12,261,570 B2Granted

Mixer and semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKazuaki Ohshima, Hitoshi Kunitake, Tatsunori Inoue

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Abstract

To provide a mixer and a semiconductor device which each have a small circuit area and each of which operation capability is inhibited from being decreased due to heat. The mixer includes a differential portion, a current source, a first load, an input terminal, and a first output terminal; the differential portion includes a first and a second transistor; and each of the first and the second transistors includes a metal oxide in a channel formation region. A first terminal of each of the first and the second transistors is electrically connected to the input terminal and a current source and a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal. The first load has a function of supplying a current between the first terminal and a second terminal of the first load by application of voltage to the second terminal of the first load, and the current source has a function of supplying a constant current to the current source from the first terminal of each of the first and the second transistors. The current source includes a transistor including silicon in a channel formation region, and the differential portion is positioned above the current source.

Claims4

Dependent claims

A mixer comprising a differential portion, a current source, a first load, an input terminal, and a first output terminal,

wherein the differential portion includes a first transistor and a second transistor,
wherein each of the first transistor and the second transistor includes a metal oxide in a channel formation region,
wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor, the input terminal, and a first terminal of the current source,
wherein a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal,
wherein the first load is configured to supply a current between the first terminal and a second terminal of the first load when a first voltage is supplied to the second terminal of the first load,
wherein the current source is configured to supply a constant current to a first terminal of the current source,
wherein when a first signal is input to a gate of the first transistor, a second signal with a phase difference of 180° from the first signal is input to a gate of the second transistor, and a third signal is input to the input terminal, the differential portion generates a first output signal with a voltage waveform based on a voltage waveform of the first signal and a voltage waveform of the third signal and outputs the first output signal to the first output terminal,
wherein the current source comprises a transistor including silicon in a channel formation region,
wherein an insulator is positioned above the channel formation region of the transistor, and
wherein the channel formation region of the each of the first transistor and the second transistor is positioned above the insulator.

7 more elements

A mixer comprising a differential portion, a current source, a first load, a third transistor, an input terminal, and a first output terminal,

wherein the differential portion includes a first transistor and a second transistor,
wherein each of the first transistor and the second transistor includes a metal oxide in a channel formation region,
wherein a first terminal of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the third transistor,
wherein a second terminal of the third transistor is electrically connected to a first terminal of the current source,
wherein a gate of the third transistor is electrically connected to the input terminal,
wherein a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal,
wherein the first load is configured to supply a current between the first terminal and a second terminal of the first load when a first voltage is supplied to the second terminal of the first load,
wherein the current source is configured to supply a constant current to a first terminal of the current source,
wherein when a first signal is input to a gate of the first transistor, a second signal with a phase difference of 180° from the first signal is input to a gate of the second transistor, and a third signal is input to the input terminal, the differential portion generates a first output signal with a voltage waveform based on a voltage waveform of the first signal and a voltage waveform of the third signal and outputs the first output signal to the first output terminal,
wherein the current source comprises a transistor including silicon in a channel formation region,
wherein an insulator is positioned above the channel formation region of the transistor, and
wherein the channel formation region of the each of the first transistor and the second transistor is positioned above the insulator.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/606,825Filed 20 May 2020
Priority: JP 2019-10234131 May 2019
Published: US 2022/0216830 A17 Jul 2022
Granted: 25 Mar 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification20 codes

H03D 7/1425
Balanced arrangements: with transistors
H03D 7/12
Transference of modulation from one carrier to another, e.g. frequency-changing: by means of semiconductor devices having more than two electrodes
H03D 7/1441
With transistors: using field-effect transistors
H03D 7/1458
With transistors: double balanced arrangements, i.e. where both input signals are differential