Method of forming vias in a GaN/diamond wafer
AssigneeRFHIC Corporation
InventorWon Sang Lee
Life of this patent
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Abstract
Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on the III-Nitride layer. Next, the silicon carrier wafer and the protection layer are removed. Then, a silicon substrate wafer that includes a protection layer, silicon substrate and a diamond layer is prepared and glass bonded to the first diamond layer.
Claims14
A method for processing a semiconductor wafer, comprising:
- disposing and patterning a first metal layer on a semiconductor layer of a semiconductor wafer, wherein the semiconductor wafer includes a support layer, a bonding layer, a first diamond layer, an intermediate layer and the semiconductor layer;
- drilling one or more holes from the first metal layer toward the support layer to thereby form one or more vias that extend from the first metal layer into the support layer;
- disposing a second metal layer on the first metal layer and in a portion of the one or more vias;
- and
- removing the support layer and the bonding layer to expose a surface of the first diamond layer,
- wherein the support layer includes a second diamond layer, a silicon substrate, and a protection layer.
Dependencies are inferred from the claim text.