Photonic semiconductor device and method of manufacture

A package comprising:

• a first photonic structure on a first redistribution structure, wherein the first photonic structure comprises:
• a first semiconductor device;
• a first redistribution layer connected to the first semiconductor device;
• and
• a first waveguide over the first redistribution layer;
• a second waveguide extending over the first photonic structure, wherein the second waveguide is optically coupled to the first waveguide, wherein the second waveguide is a different material than the first waveguide;
• a second redistribution structure extending over the first photonic structure and over the second waveguide, wherein the second redistribution structure is electrically connected to the first redistribution layer;
• and
• a first semiconductor die on the second redistribution structure, wherein the first semiconductor die is electrically connected to the first photonic structure.

A device comprising:

• a first photonic structure comprising:
• a first substrate;
• a first region of a first dielectric material adjacent the first substrate;
• a first waveguide over the first substrate and over the first region, wherein the first waveguide comprises a first grating coupler;
• a first redistribution structure over the first waveguide;
• and
• a first electronic die bonded to the first redistribution structure;
• and
• a photonic interconnect structure comprising:
• a second waveguide over a second substrate, wherein the second waveguide comprises a second grating coupler;
• and
• a second redistribution structure over the second waveguide, wherein the first photonic structure is bonded to the photonic interconnect structure, wherein the second redistribution structure is electrically connected to the first redistribution structure, wherein the second grating coupler is optically coupled to the first grating coupler through the first dielectric material.