Device and method for producing layers with improved uniformity in coating systems with horizontally rotating substrate and additional plasma sources
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsMichael Vergöhl, Andreas Pflug, Tobias Zickenrott, Stefan Bruns
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Abstract
The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.
Claims21
A device for depositing uniform layers on rotationally moved substrates by means of magnetron sputtering comprising
- (a) a vacuum chamber with a sputtering compartment,
- (b) at least one inlet for a sputtering gas;
- (c) a turntable with at least one substrate holder;
- and
- (d) at least one magnetron sputtering source arranged in the sputtering compartment with at least one electrode, and
- at least one further microwave plasma source being arranged in the sputtering compartment;
- and
- wherein the at least one microwave plasma source for local plasma compression is arranged asymmetrically to one of the axes of the at least one electrode, and wherein the at least one microwave plasma source is placed at an end of the at least one magnetron sputtering source.
A method of depositing uniform layers on rotationally moved substrates by magnetron sputtering, in which
- (a) at least one substrate is arranged on a turntable in a vacuum chamber to enable a coating on a rotational movement of the substrate and
- (b) at least one layer is deposited on the at least one substrate with at least one magnetron sputtering source arranged in the sputtering compartment and with at least one electrode, with the layers of source material of the electrodes being formed by sputter gas,
- wherein a homogeneous or inhomogeneous plasma density is generated in the sputtering compartment utilizing at least one further microwave plasma source, which causes a homogeneous or inhomogeneous removal rate of the source material on the substrate;
- and
- wherein the at least one microwave plasma source for local plasma compression is arranged asymmetrically to one of the axes of the at least one electrode, and wherein the at least one microwave plasma source is placed at an end of the at least one magnetron sputtering source.
Dependencies are inferred from the claim text.