Bonding process for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang Chang, I-Shi Wang, Jen-Hao Liu
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.
Claims20
A semiconductor device structure, comprising:
- a first substrate comprising a first face, a second face opposite the first face, and one or more movable microelectromechanical system (MEMS) devices between the first face and second face;
- a second substrate bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate;
- and
- one or more expansion joints in the second face of the first substrate.
A semiconductor device structure, comprising:
- a first die comprising a first face and a second face opposite the first face;
- a second die bonded to the first face of the first die such that the second face of the first die faces away from the second die;
- and
- one or more expansion trenches in the second face of the first die, wherein a expansion trench has sidewalls that extend linearly along the second face of the first die and that terminate at a bottom surface of the expansion trench, the bottom surface being disposed at a depth between the first face and the second face of the first die.
A semiconductor device structure, comprising:
- a first die comprising a first face and a second face opposite the first face, the first die including a base layer defining the first face and a semiconductor layer defining the second face, wherein a material layer separates the base layer from the semiconductor layer, and wherein first bonding structures are disposed on the semiconductor layer;
- a second die including a substrate and an interconnect layer disposed over the substrate, wherein the interconnect layer includes second bonding structures that are bonded to the first bonding structures such that the second face of the first die faces away from the second die;
- and
- one or more trenches in the base layer of the first die, wherein a trench has sidewalls that extend linearly along the second face of the first die and that terminate at a bottom surface of the trench, the bottom surface of the trench being disposed at a depth within the base layer.
Dependencies are inferred from the claim text.