Nanowire-based interconnects for sub-millimeter wave integrated circuit applications

A device, comprising:

• a substrate;
• and
• at least one electrically conducting portion supported by the substrate, the at least one electrically conducting portion comprising a signal line extending from a first port to a second port, and a ground plane electrically isolated from the signal line,
• wherein the electrically conducting portion comprises a layer of a first electrically conducting material and a layer of a metal oxide material comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of a second electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer of the metal oxide material opposite the first side,
• wherein the signal line comprises a layer of a third electrically conducting material, wherein the layer of the metal oxide is arranged between the layer of the first electrically conducting material and the layer of the third electrically conducting material, the layer of third electrically conducting material extending continuously between the first port and the second port.