Ion implanter, ion implantation method, and semiconductor device manufacturing method

Abstract

An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.

Dependencies are inferred from the claim text.