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US 12,253,636 B2Granted
Photoelectric conversion panel, x-ray panel, and imaging apparatus
AssigneeSharp Display Technology Corporation
InventorsRikiya Takita, Fumiki Nakano, Makoto Nakazawa, Hiroyuki Moriwaki
Life of this patent
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Abstract
A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.
Claims9
A photoelectric conversion panel comprising:
- a substrate;
- a plurality of transistors formed on the substrate;
- a plurality of photoelectric conversion elements respectively connected to the plurality of transistors;
- a metal layer that is formed on a light incident side of the plurality of photoelectric conversion elements and arranged in a position where the metal layer overlaps a subset of the plurality of photoelectric conversion elements in a plan view;
- and
- a transparent electrode that is formed on the light incident side of the plurality of photoelectric conversion elements and arranged in a position where the transparent layer overlaps, in the plan view, at least one of the plurality of photoelectric conversion elements, arranged inside an inner area defined by an inner edge of an external edge region of the substrate, out of the plurality of photoelectric conversion elements,
- wherein the plurality of photoelectric conversion elements is arranged in a matrix on the substrate, and
- the metal layer is formed in a position where the metal layer overlaps, in the plan view, the at least one of the plurality of photoelectric conversion elements, arranged in the external edge region of the substrate, out of the plurality of photoelectric conversion elements.
5 more elements
A photoelectric conversion panel comprising:
- a substrate;
- a plurality of transistors formed on the substrate;
- a plurality of photoelectric conversion elements respectively connected to the plurality of transistors;
- and
- a metal layer that is formed on a light incident side of the plurality of photoelectric conversion elements and arranged in a position where the metal layer overlaps a subset of the plurality of photoelectric conversion elements in a plan view;
- and
- a bias line that is connected to the plurality of photoelectric conversion elements and formed beneath or below the metal layer, wherein the metal layer is connected to the bias line.
4 more elements
Dependencies are inferred from the claim text.