Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer

A silicon carbide single crystal wafer sliced from a chemical vapor gas grown silicon carbide single crystal ingot, in which:

• the silicon carbide single crystal wafer has a diameter with a radius (R) extending from a center (R=0) to an outer peripheral edge (R=R), wherein a wafer central part is located at and/or substantially near the center, a wafer intermediate part is located radially outward from the wafer central part at and/or substantially near a half radius (R=½R), and a wafer peripheral part is located radially outward from both the wafer central part and the wafer intermediate part closest to the outer peripheral edge:
• a dislocation density of all dislocations in the wafer, which are indicated by KOH etch pit density or dislocation contrast density evaluated by an X-ray topography measurement, is 3500 dislocations/cm2 or less;
• and
• the wafer central part, wafer intermediate part, wafer peripheral part each comprise a corresponding dislocation density, and a difference of the dislocation density between each pairing of the wafer central part, the wafer intermediate part, and the wafer peripheral part is less than 50% of an average value of the dislocation densities among the wafer central part, the wafer intermediate part, and the wafer peripheral part,
• wherein the silicon carbide single crystal wafer contains a metal of 1×1014/cm3 or more in crystal, the metal including at least one of Ta, Ti, and Nb, and
• the dislocations including threading screw dislocations, and a threading screw dislocation density is 2000 dislocations/cm2 or less in each of the central part, the intermediate part, and the peripheral part, and is 30% or less of a threading screw dislocation density of each corresponding part of a silicon carbide seed crystal chemical vapor gas grown into the silicon carbide single crystal ingot from which the wafer is sliced.