Back to results
US 12,252,780 B2Granted
Growth method of highly twinned SiGe alloy on the basal plane of trigonal substrate under electron beam irradiation
AssigneeUnited States of America as represented by the Administrator of NASA
InventorsHyun Jung Kim, Sang H. Choi, Yeonjoon Park
Life of this patent
Estimating the term…
Abstract
Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.
Claims18
A method, comprising:
- growing a doped single crystal SiGe film on a substrate at a temperature at or above 800 degrees Celsius, the SiGe film having a first crystal orientation structure;
- and
- irradiating an area of the doped single crystal SiGe film with an electron beam for a required time to produce a second crystal orientation structure different from the first crystal orientation structure, the second crystal orientation structure including one or more stacking faults.
A method comprising:
- providing a trigonal substrate;
- growing a doped single crystal SiGe film on the trigonal substrate at a temperature of more than about 800° C. by sputter depositing doped SiGe on the trigonal substrate, the SiGe film having a first crystal orientation structure;
- and
- irradiating the doped single crystal SiGe film with an electron beam for a required time to produce a second crystal orientation structure different from the first crystal orientation structure, the second crystal orientation structure including one or more stacking faults.
1 more element
Dependencies are inferred from the claim text.