Micromechanical component for a sensor device

A micromechanical component for a sensor device, the micromechanical component comprising:

• a mounting;
• and
• a seismic mass that is situated at and/or in the mounting, is deformable and/or displaceable relative to the mount, and includes:
• a first electrode area;
• a second electrode area that is electrically insulated from the first electrode area;
• and
• a connecting area that is made up of at least one electrically insulating material, is in mechanical contact with each of the first electrode area and the second electrode area, and connects the first and second electrode areas to each other;
• wherein:
• the first electrode area includes a first conductive area structured out of a first semiconductor and/or metal layer;
• the second electrode area includes a second conductive area structured out of the first semiconductor and/or metal layer;
• the first electrode area includes a third conductive area that is in mechanical contact with the first conductive area and that is structured out of a second semiconductor and/or metal layer;
• the second electrode area includes a fourth conductive area that is in mechanical contact with the second conductive and that is structured out of the second semiconductor and/or metal layer;
• a first separating trench, structured through the first semiconductor and/or metal layer, is formed between the first conductive area and the second conductive area;
• a second separating trench, structured through the second semiconductor and/or metal layer, is formed between the third conductive area and the fourth conductive area;
• a first center plane, which extends centrally through the first separating trench, is oriented in parallel to, and at a distance from, a second center plane, which extends centrally through the second separating trench;
• (a) an end of the first separating trench that faces in a direction towards at least one plane in which the third and fourth conductive areas are arranged and (b) an end of the second separating trench that faces in a direction towards at least one plane in which the first and second conductive areas are arranged each opens to a connecting trench that:
• is free of material of the second semiconductor and/or metal layer;
• and
• is at least partially filled with the at least one electrically insulating material of the connecting area;
• the first separating trench, along its first center plane, and the second separating trench, along its second center plane, extend from a first side of the seismic mass to a second side of the seismic mass;
• the first conductive area and the second conductive area, both on the first side of the seismic mass and on the second side of the seismic mass, are each configured with a protruding separating trench edge area adjoining the first separating trench;
• the connecting trench adjoins the second separating trench, both on the first side of the seismic mass and on the second side of the seismic mass, in each case perforating a side wall of the third conductive area and of the fourth conductive area, respectively;
• and
• a protruding edge of the connecting area, which is made of the at least one electrically insulating material:
• protrudes at the perforated side walls of the third conductive area and of the fourth conductive area, respectively;
• and
• covers the protruding separating trench edge areas of the first conductive area and of the second conductive area.

A manufacturing method for a micromechanical component for a sensor device, the micromechanical component including a mounting, a seismic mass that (a) is situated at and/or in the mounting, (b) is deformable and/or displaceable relative to the mount, and (c) includes a first electrode area, a second electrode area that is electrically insulated from the first electrode area, and a connecting area that is made up of at least one electrically insulating material, is in mechanical contact with each of the first electrode area and the second electrode area, and connects the first and second electrode areas to each other, wherein the first electrode area includes a first conductive area structured out of a first semiconductor and/or metal layer, wherein the second electrode area includes a second conductive area structured out of the first semiconductor and/or metal layer, wherein the first electrode area additionally includes a third conductive area that is in mechanical contact with the first conductive area and that is structured out of a second semiconductor and/or metal layer, wherein the second electrode area additionally includes a fourth conductive area that is in mechanical contact with the second conductive area and that is structured out of the second semiconductor and/or metal layer, and wherein the connecting area is arranged partly over at least a part of the first conductive area, between the first and third conductive areas, and partly over at least a part of the second conductive area, between the second and fourth conductive areas, the method comprising the following steps:

• forming the seismic mass at and/or in the mounting of the micromechanical component in such a way that the seismic mass is deformable and/or displaceable with respect to mounting;
• and
• configuring the first electrode area with the third conductive area mechanically contacting the first conductive area, and configuring the second electrode area with the fourth conductive area mechanically contacting the second conductive area, by structuring the third conductive area and the fourth conductive area out of the second semiconductor and/or metal layer.