Back to results
US 12,250,014 B2Granted
THz impulse and frequency comb generation using reverse recovery of PIN diode
AssigneeThe Regents of the University of California
InventorsAydin Babakhani, Seyedmohammadreza Razavian
Life of this patent
Estimating the term…
Abstract
Many embodiments provide a frequency comb receiver that includes a PIN diode, a THz pulse generator block that generates THz tones (LO) for coherent frequency comb detection, an on-chip antenna for broadband detection and a driver stage switched by a series of buffers, where a repetition rate of the LO tones are tunable over a range and determines a spacing between two adjacent tones in the corresponding frequency comb.
Claims20
A frequency-comb radiator, comprising:
- a PIN (positive, intrinsic, negative) diode;
- an on-chip antenna that radiates pulses, wherein the PIN diode is coupled to the on-chip antenna through a matching network;
- and
- a driver stage switched by an input signal through a series of buffers, the driver stage comprising a first transistor and a first transmission line, where the first transmission line is connected to an end side of the PIN diode and to the first transistor, and the first transmission line isolates the PIN diode from the first transistor;
- wherein a reverse-recovery of the PIN diode caused by the switching of the driver stage is used to generate Terahertz (THz) pulses that are radiated through the on-chip antenna;
- and
- wherein the combination of the transistor and transmission line in the driver stage causes the PIN diode to operate in a nonlinear region and the nonlinearity of the PIN diode generates the THz-pulses that are radiated through the on-chip antenna through the matching network.
4 more elements
A method of frequency comb radiation, the method comprising:
- radiating pulses using an on-chip antenna coupled to a PIN (positive, intrinsic, negative) diode through a matching network;
- driving the PIN diode using a driver stage switched by an input signal through a series of buffers, the driver stage comprising a first transistor and a first transmission line, where the first transmission line is connected to an end side of the PIN diode and to the first transistor, and the first transmission line isolates the PIN diode from the first transistor;
- and
- generating Terahertz (THz) pulses using a reverse-recovery of the PIN diode caused by the switching of the driver stage, wherein the THz-pulses are radiated through the on-chip antenna;
- wherein the combination of the transistor and transmission line in the driver stage causes the PIN diode to operate in a nonlinear region and the nonlinearity of the PIN diode generates the THz-pulses that are radiated through the on-chip antenna through the matching network.
2 more elements
Dependencies are inferred from the claim text.