Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuncheol Kim, Yongseok Kim, Dongsoo Woo, Kyunghwan Lee
Life of this patent
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Abstract
A semiconductor device includes: a channel; a gate structure on the channel; a first source/drain arranged at a first end of the channel and including a metal; a first tunable band-gap layer arranged between the channel and the first source/drain and having a band gap that changes according to stress; a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and a second source/drain at a second end of the channel.
Claims20
A semiconductor device comprising:
- a channel;
- a gate structure on the channel;
- a first source/drain at a first end of the channel, the first source/drain comprising a metal;
- a first tunable band-gap layer between the channel and the first source/drain, the first tunable band-gap layer having a band gap that varies according to stress;
- a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field;
- and
- a second source/drain at a second end of the channel.
A semiconductor device comprising:
- a semiconductor substrate having a recess;
- a gate structure in the recess of the semiconductor substrate;
- a first source/drain on the semiconductor substrate at a first side of the gate structure, the first source/drain comprising a metal;
- a 2-dimensional material layer between the semiconductor substrate and the first source/drain;
- an electrostrictive layer between the gate structure and the 2-dimensional material layer, the electrostrictive layer having a property of being deformed based on and upon application of an electric field;
- and
- a second source/drain on the semiconductor substrate at a second side of the gate structure opposite the first side.
A semiconductor device comprising:
- a semiconductor substrate having a recess;
- a gate structure in the recess of the semiconductor substrate;
- a tunable band-gap layer between the semiconductor substrate and the gate structure, the tunable band-gap layer having a band gap that varies according to stress;
- an electrostrictive layer between the tunable band-gap layer and the gate structure, the electrostrictive layer having a property of being deformed based on and upon application of an electric field;
- a first source/drain at a first end of the tunable band-gap layer;
- and
- a second source/drain at a second end of the tunable band-gap layer.
Dependencies are inferred from the claim text.