Methods and material deposition systems for forming semiconductor layers

A method of configuring a molecular beam epitaxy system, the method comprising:

• providing a rotation mechanism configured to rotate a substrate deposition plane of a substrate around a center axis of the substrate deposition plane;
• providing a positioning mechanism configured to allow the substrate deposition plane and an exit aperture of at least one material source in a plurality of material sources to be adjusted in position relative to each other between production runs, wherein the position includes an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate deposition plane, wherein the at least one material source has a predetermined material ejection spatial distribution with a symmetry axis that intersects the substrate at a point offset from the center axis;
• providing a reaction chamber in which the rotation mechanism and the plurality of material sources are housed;
• selecting a target thickness non-uniformity value and a desired growth rate for a deposition layer thickness;
• selecting set values for the orthogonal distance and the lateral distance;
• adjusting the tilt angle using the set values for the orthogonal distance and the lateral distance, wherein the adjusting is based on the predetermined material ejection spatial distribution of the at least one material source to achieve the target thickness non-uniformity value for the desired growth rate;
• and
• scaling a size of the reaction chamber based a relationship of the set values of the lateral distance and the orthogonal distance to a radius RSUB of the substrate.