Method for manufacturing variable radio frequency micro-electromechanical switch

A method for manufacturing a switch comprising the following steps:

• a) depositing, on a planar face of at least one of a semiconductor or an insulating substrate, a first sacrificial layer and producing a pattern by at least one of lift-off and etching of a portion of the first sacrificial layer;
• b) depositing, on the first sacrificial layer and on the planar face of the substrate, at least a first layer of metal;
• then producing a pattern by at least one of lift-off and etching a portion of the first layer of metal, to form a first RF line and a first MEMS membrane;
• c) depositing, on the first RF line, a second sacrificial layer;
• then producing a pattern by at least one of lift-off and etching a part of the second sacrificial layer;
• d) depositing, on the second sacrificial layer, a dielectric layer;
• then producing a pattern by at least one of lift-off and etching a portion of the dielectric layer, to form a dome having an inner face across from the planar face of the substrate, an outer face opposite the inner face, as well as at least one opening in the dome;
• e) removing the first and second sacrificial layers through the at least one opening;
• then
• f) depositing, on the outer face of the dome and on the planar face of the substrate, at least one second metal layer;
• then producing a pattern that plugs the at least one opening and that forms a second RF line by at least one of lift-off and etching of a portion of the second metal layer, wherein least one of the second RF line and the first RF line closes the at least one opening formed in the preceding steps, thus creating a hermetic cavity that encapsulates the MEMS membrane.