US 12,247,300 B2 · Cleaning solution and cleaning method

Abstract

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

Claims20

Dependent claims

A cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid comprising:

an amine oxide compound that is a compound represented by Formula (2), or its salt;
and
at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts,
wherein a content of the amine oxide compound is 0.00001 to 0.15 mass % based on a total mass of the cleaning liquid:
where R3, R4 and R5 each independently represent an alkyl group having 1 to 6 carbon atoms, and two of R3, R4 and R5 may be bonded together to form a five- or six-membered nitrogen-containing non-aromatic ring that may have an alkyl group having 1 to 4 carbon atoms.

2 more elements

Dependencies are inferred from the claim text.

Cleaning solution and cleaning method

Life of this patent

Cleaning solution and cleaning method

Life of this patent

Abstract

Claims20