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AssigneeForschungszentrum Julich GmbH
InventorsAlexander Pawlis, Johanna Janßen, Benjamin Bennemann, Christoph Krause
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A method for producing an ohmic contact for an electronic part, wherein a layer consisting of a semiconductor is applied to a substrate is disclosed. A surface to be contacted of the applied semiconductor is wet-chemically etched, which is rinsed with radicals. An electrical conductor or a semiconductor is applied to the surface rinsed with radicals. An electronic component having several semiconductor layers on a substrate is also disclosed. A top layer on the one or more semiconductor layers is applied to the substrate. The top layer consists of an electrically non-conductive dielectric having an access through the top layer to a semiconductor layer, wherein adjacent semiconductor layers consist of different II-VI semiconductors. The access is at least partially filled with a II-VI semiconductor. A metallic contact applied to the II-VI semiconductor extends to the outer side of the top layer or projects outwardly relative to the top layer.
A method for producing an ohmic contact for an electronic part, wherein a layer consisting of a semiconductor is applied indirectly or directly to a substrate, wherein a surface to be contacted of the applied semiconductor is wet-chemically etched, the wet-chemically etched surface is rinsed with radicals, after rinsing with radicals, the surface to be contacted of the semiconductor layer is processed with a metal vapor, wherein the metal vapor includes a metal that is also present in the semiconductor so as to fill metal defects in the semiconductor with the corresponding metal from the metal vapor, and a semiconductor is applied to the surface processed with the metal vapor.
Dependencies are inferred from the claim text.