Imaging device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYoshiyuki Kurokawa
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Abstract
A highly sensitive imaging device that can perform imaging even under a low illuminance condition is provided. One electrode of a photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of a first transistor and one of a source electrode and a drain electrode of a third transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other electrode of the photoelectric conversion element is electrically connected to a first wiring. A gate electrode of the first transistor is electrically connected to a second wiring. When a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD.
Claims6
An imaging device comprising:
- a plurality of pixels arranged in a matrix;
- and
- a first transistor,
- each of the plurality of pixels comprising:
- a photoelectric conversion element;
- a second transistor;
- a third transistor;
- a first wiring;
- and
- a second wiring,
- wherein one electrode of the photoelectric conversion element is electrically connected to the first wiring,
- wherein the other electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,
- wherein a gate of the second transistor is electrically connected to the second wiring,
- wherein among the plurality of pixels, the other of the source and the drain of the second transistor in a pixel in an nth row and an mth column and the other of the source and the drain of the second transistor in a pixel in a (n+1)-th row and the mth column are electrically connected to a gate of the first transistor, and
- wherein a maximum value of a potential supplied to the second wiring is smaller than a potential supplied to the first wiring.
An imaging device comprising:
- a plurality of pixels arranged in a matrix;
- a first transistor;
- a second transistor;
- a first wiring;
- and
- a second wiring,
- each of the plurality of pixels comprising:
- a photoelectric conversion element;
- a third transistor;
- a fourth transistor;
- a third wiring;
- and
- a fourth wiring,
- wherein one electrode of the photoelectric conversion element is electrically connected to the third wiring,
- wherein the other electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor,
- wherein a gate of the third transistor is electrically connected to the fourth wiring,
- wherein among the plurality of pixels, the other of the source and the drain of the third transistor in a pixel in an nth row and an mth column and the other of the source and the drain of the third transistor in a pixel in a (n+1)-th row and the mth column are electrically connected to a gate of the first transistor,
- wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
- wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring, and
- wherein a maximum value of a potential supplied to the fourth wiring is smaller than a potential supplied to the third wiring.
Dependencies are inferred from the claim text.