US 12,243,798 B2 · Semiconductor device and method of fabricating the same

Abstract

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a circuit substrate, a semiconductor chip mounted on the circuit substrate, and a thermal radiation film covering the semiconductor chip on the circuit substrate. The semiconductor chip includes first lateral surfaces opposite to each other in a first direction and second lateral surfaces opposite to each other in a second direction that intersects the first direction. A first width of the first lateral surface is less than a second width of the second lateral surface. The thermal radiation film covers a top surface of the semiconductor chip and entirely surrounds the first and second lateral surfaces of the semiconductor chip. The thermal radiation film has slits directed toward the first lateral surfaces from ends of the thermal radiation film.

Claims20

Dependent claims

A semiconductor package, comprising:

a circuit substrate;
a semiconductor chip mounted on the circuit substrate;
and
a thermal radiation film covering the semiconductor chip on the circuit substrate,
wherein the semiconductor chip includes:
first lateral surfaces that are opposite to each other in a first direction;
and
second lateral surfaces that are opposite to each other in a second direction that intersects the first direction,
wherein a first width of the first lateral surfaces is less than a second width of the second lateral surfaces,
wherein the thermal radiation film covers a top surface of the semiconductor chip and covers the first lateral surfaces and the second lateral surfaces of the semiconductor chip, and
wherein the thermal radiation film has a plurality of slits that are directed toward the first lateral surfaces from ends of the thermal radiation film.

8 more elements

A semiconductor package, comprising:

a base film;
a semiconductor chip on the base film, the semiconductor chip having a short lateral surface and a long lateral surface which has a width greater than a width of the short lateral surface;
and
a thermal radiation film covering the semiconductor chip on the base film,
wherein the thermal radiation film includes:
a central part that overlaps an entirety of the semiconductor chip;
and
a peripheral part that surrounds the central part and is attached to the base film,
wherein the thermal radiation film has a slit on the peripheral part and adjacent to the short lateral surface of the semiconductor chip,
wherein the thermal radiation film includes:
an adhesion layer;
a thermal conduction layer on the adhesion layer;
and
a protection layer on the thermal conduction layer,
wherein a shape of the adhesion layer, a shape of the thermal conduction layer, and a shape of the protection layer in a plan view are substantially the same, and
the thermal radiation film covers an entirety of each of a top surface of the semiconductor chip, the short lateral surfaces of the semiconductor chip, and the long lateral surfaces of the semiconductor chip.

13 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of fabricating the same

Life of this patent

Semiconductor device and method of fabricating the same

Life of this patent

Abstract

Claims20