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US 12,242,195 B2Granted
Method for manufacturing cured film and use of the same
AssigneeMerck Patent GmbH
InventorsTakashi Sekito, Shigemasa Nakasugi, Hiroshi Yanagita, Taku Hirayama
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Abstract
To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance. A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydro-carbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film. Use of the cured film.
Claims13
A method for manufacturing a resist layer above a cured film comprising:
- (1) applying a composition (i) above a substrate;
- (2) forming a hydrocarbon-containing film from the composition (i);
- and
- (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film,
- provided that the composition (i) comprises a hydrocarbon-containing compound (A) and a solvent (B);
- and
- the hydrocarbon-containing compound (A) comprises a structural unit (A1-1) represented by the following formula (A1-1):
- wherein,
- Ar21 is a C6-50 aromatic hydrocarbon group;
- R21 is a C6-50 aromatic hydrocarbon group, hydrogen, or a single bond bonded to another structural unit;
- n21 is 0;
- wherein R22 and R23 are not present;
- wherein a single bond connects the two phenyl rings;
- where, Ar21, and R21 contain no fused aromatic ring;
- R12 is I, Br or CN;
- p11 is a number of 0 to 5, p12 is a number of 0 to 1, q11 is 0, r11 is a number of 0 to 5, s11 is a number of 0 to 5;
- and
- p11, q11 and r11 do not become 0 simultaneously in one structural unit;
- where, the intensity ratio of G band and D band R=ID/IG in Raman spectroscopy (measured with laser wavelength of 514.5 nm) of the cured film formed in the process (3) is 0.35 to 0.90;
- wherein the hydrocarbon-containing compound (A) is a polymer comprising an aldehyde derivative when the polymer is synthesized from 0 to 30 mol % based on the sum of all components used in the synthesis;
- wherein the process (3) comprises the following conditions:
- in the case of plasma irradiation:
- the atmosphere is N2, NF3, H2, fluorocarbon, rare gas, or a mixture of any of these;
- and/or
- the RF discharge power is 1,000 to 10,000 W,
- in the case of electron beam irradiation:
- the acceleration voltage is 2 to 200 kV, and/or
- the irradiation amount is 100 to 5,000 kGy,
- in the case of ion irradiation:
- the elemental species of the ion to be irradiated is hydrogen, boron, carbon, nitrogen, rare gas, or a mixture of any of these;
- the acceleration voltage is 3 to 1000 kV;
- and/or
- the irradiation amount is 1013 to 1018 ion/cm2.
30 more elements
Dependencies are inferred from the claim text.