Bonded assembly, and ceramic circuit substrate and semiconductor device using the same
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsShota Yamamoto, Fumihiko Yoshimura, Seiichi Suenaga, Tomoyuki Oozeki
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Abstract
A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
Claims10
A bonded assembly, comprising a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag, wherein
- the bonding layer contains Sn or In, and a concentration of Sn or In in a measurement region is in a range of 1 at % or more and 6 at % or less,
- the measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, comprises a Ag-rich region having a Ag concentration of 60 at % or more that has an area of 70% or less of the area of the measurement region, and Ag-poor regions each having a Ag concentration of 50 at % or less, and
- at least one region where the Ag-poor regions are linked to each other in the thickness direction of the bonding layer is present in a triple continuous measurement region where three measurement regions are continuously linked to each other in the orthogonal region.
Dependencies are inferred from the claim text.