Device emitting or detecting terahertz waves, and manufacturing method for device
AssigneeCanon Kabushiki Kaisha
InventorYasushi Koyama
Life of this patent
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Abstract
A device includes a first antenna arranged on a substrate, with the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer, a second antenna arranged on the substrate, with the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer, and a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna. A shunt device is arranged on the substrate and electrically connected to the third conductor layer. In planar view, the shunt device does not overlap with at least the first conductor layer.
Claims17
A device comprising:
- a first antenna arranged on a substrate, the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer;
- a second antenna arranged on the substrate, the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer;
- a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna;
- and
- a shunt device arranged on the substrate and electrically connected to the third conductor layer,
- wherein, in planar view, the shunt device does not overlap with at least the first conductor layer.
Dependencies are inferred from the claim text.