Tuning method for active metamaterials using IGZO Schottky diodes
AssigneeShan Dong University
InventorsYifei Zhang, Aimin Song, Haotian Ling, Qingpu Wang
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Abstract
A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.
Claims9
A tuning method for active metamaterials using indium-gallium-zinc oxide (IGZO) Schottky diodes, wherein the IGZO Schottky diode comprises substrates, Schottky electrodes, amorphous IGZO active layers, and ohmic electrodes from the bottom up, comprising the following steps:
- (i) metamaterials are used as the Schottky electrodes, and the amorphous IGZO active layers are used to fully cover capacitive structures in the metamaterials;
- the capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Schottky barriers;
- the substrates are cleaned with DECON, deionized water, and acetone successively;
- wherein the DECON is a decontamination agent;
- then the substrates are placed into ethanol immediately for cleaning;
- finally, the substrates are cleaned with deionized water again and dried by nitrogen gas;
- and
- (ii) the IGZO Schottky diodes from step (i) are used to tune the metamaterials dynamically.
Dependencies are inferred from the claim text.