Contact with bronze material to mitigate undercut
AssigneeTexas Instruments Incorporated
InventorsNazila Dadvand, Christopher Daniel Manack, Salvatore Frank Pavone
Life of this patent
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Abstract
Described examples provide microelectronic devices and fabrication methods, including fabricating a contact structure by forming a titanium or titanium tungsten barrier layer on a conductive feature, forming a tin seed layer on the barrier layer, forming a copper structure on the seed layer above the conductive feature of the wafer or die, heating the seed layer and the copper structure to form a bronze material between the barrier layer and the copper structure, removing the seed layer using an etching process that selectively removes an exposed portion of the seed layer, and removing an exposed portion of the barrier layer.
Claims20
A microelectronic device, comprising:
- an electronic component disposed on or in a semiconductor substrate of a wafer or die;
- a metallization structure, including a conductive feature;
- and
- a contact structure, including:
- a barrier layer disposed at least partially on the conductive feature,
- a copper structure that extends at least partially outward from a side of the metallization structure, and
- a bronze material disposed between the barrier layer and the copper structure.
A contact structure, comprising:
- a barrier layer at least partially on a conductive feature of a wafer or die;
- a seed layer at least partially on the barrier layer, the seed layer including tin;
- a copper structure on the seed layer above the conductive feature of the wafer or die;
- a bronze material between the barrier layer and the copper structure;
- an exposed portion of the seed layer exposing a portion of the barrier layer;
- and
- the exposed portion of the barrier layer is removed.
A microelectronic device, comprising:
- an electronic component on or in a semiconductor substrate;
- a metallization structure above the semiconductor substrate, including a conductive feature along a side of the metallization structure;
- a contact structure, including:
- a titanium or titanium tungsten barrier layer at least partially on the conductive feature,
- a tin seed layer at least partially on the barrier layer,
- a copper structure on the seed layer above the conductive feature of the wafer or die,
- a bronze material between the barrier layer and the copper structure;
- and
- a bond wire or a flip-chip substrate attached to the contact structure.
Dependencies are inferred from the claim text.