Substrate processing method, substrate processing apparatus and substrate processing system

A substrate processing system, comprising:

• at least one chemical oxide removal (COR) module configured to perform a COR process on a substrate having a silicon oxide film formed on the substrate;
• at least one post heat treatment (PHT) module configured to perform a PHT process on the substrate processed in the at least one COR module;
• at least one load lock module;
• a vacuum transfer module configured to transfer the substrate among the at least one COR module, the at least one PHT module, and the at least one load lock module;
• a post process module configured to remove residual fluorine on the substrate processed in the at least one PHT module under an atmosphere kept at atmospheric pressure, the post process module including:
• a substrate stage disposed in the post process module;
• a temperature adjustment mechanism configured to adjust a temperature of the substrate mounted on the substrate stage;
• a moisture supply mechanism configured to supply water vapor into the post process module;
• and
• an inert gas supply mechanism configure to supply an inert gas into the post process module;
• an atmospheric transfer module configured to transfer the substrate from the at least one load lock module to the post process module;
• and
• a controller programmed to execute:
• transferring, by the vacuum transfer module, the substrate to the at least one COR module to perform the COR process on the substrate in the at least one COR module;
• transferring, by the vacuum transfer module, the substrate from the at least one COR module to the at least one PHT module to perform the PHT process on the substrate in the at least one PHT module;
• transferring, by the vacuum transfer module, the substrate from the at least one PHT module to the at least one load lock module;
• and
• transferring, by the atmospheric transfer module, the substrate from the at least one load lock module to the post process module to remove the residual fluorine on the substrate in the post process module,
• wherein the controller is further programmed to execute setting an amount of moisture contained in the atmosphere in the post process module to be 88.5 g/m3 by the moisture supply mechanism and the inert gas supply mechanism, and exposing the substrate to the atmosphere in the post process module for three minutes or more and less than ten minutes.