Two-dimensional electronic component and method of manufacturing same
AssigneeNational Central University
InventorsChing-Yuan Su, En Yi Liao
Life of this patent
Estimating the term…
Abstract
A two-dimensional electronic component includes a substrate; an artificial two-dimensional (2D) material disposed on the substrate; and a first metallic electrode disposed on the artificial 2D material. The artificial 2D material includes a layered atomic structure including a middle atomic layer, a lower atomic layer disposed on a lower surface of the middle atomic layer, and an upper atomic layer disposed on an upper surface of the middle atomic layer respectively. The upper atomic layer and the first metallic electrode are attracted together at a junction therebetween by metallic bonding.
Claims15
A two-dimensional electronic component, comprising:
- a substrate;
- an artificial two-dimensional (2D) material disposed on the substrate;
- and
- a first metallic electrode disposed on the artificial 2D material;
- wherein the artificial 2D material includes a layered atomic structure including a middle atomic layer, a lower atomic layer disposed on a lower surface of the middle atomic layer, and an upper atomic layer disposed on an upper surface of the middle atomic layer respectively;
- and
- wherein the upper atomic layer and the first metallic electrode are attracted together at a junction therebetween by metallic bonding.
A method of manufacturing a two-dimensional (2D) electronic component, wherein the 2D electronic component comprises a substrate, an artificial two-dimensional (2D) material disposed on the substrate, and a first metallic electrode disposed on the artificial 2D material, the artificial 2D material includes a layered atomic structure including a middle atomic layer, a lower atomic layer disposed on a lower surface of the middle atomic layer, and an upper atomic layer disposed on an upper surface of the middle atomic layer respectively, the upper atomic layer and the first metallic electrode are attracted together at a junction therebetween by metallic bonding, the method comprising the steps of:
- providing the substrate;
- placing the artificial 2D material having the layered atomic structure on the substrate in a vacuumed environment;
- defining a first heterostructure on the upper atomic layer of the artificial 2D material to make a semiconductor pattern;
- using plasma to remove the upper atomic layer of the artificial 2D material to expose unsaturated compounds;
- and
- introducing heterogeneous atoms into the vacuumed environment wherein the heterogeneous atoms are different from atoms of the upper atomic layer of the artificial 2D material;
- and
- binding the heterogeneous atoms with the unsaturated compounds to form a first heterogeneous zone.
Dependencies are inferred from the claim text.