Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Kang Liu, Lee-Shian Jeng, Chih-Tsung Shih, Hau-Yan Lu, Yingkit Felix Tsui
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Abstract
A semiconductor structure includes a waveguide and an optical attenuator. The waveguide is disposed over an insulating layer and configured to guide light. The optical attenuator is connected to the waveguide. The optical attenuator has a first surface and a second surface opposite the first surface, and a cross-sectional width of the optical attenuator decreases from the first surface to the second surface.
Claims20
A semiconductor structure, comprising:
- a waveguide disposed over an insulating layer and configured to guide light;
- and
- an optical attenuator connected to the waveguide, wherein the optical attenuator comprises a tapered doped structure having a gradient dopant concentration decreasing in a direction which the tapered doped structure tapers towards, and the direction is normal to a top surface of the insulating layer.
A semiconductor structure, comprising:
- a waveguide disposed over a top surface of an oxide layer and configured to guide light;
- and
- a doped structure connected to the waveguide, wherein the doped structure has a tapered shape that tapers in a direction normal to the top surface of the oxide layer, and the doped structure has a gradient dopant concentration decreasing in the direction.
A method for forming a semiconductor structure, comprising:
- forming a semiconductor pattern over a top surface of an insulating layer, the semiconductor pattern having a tapered shape that tapers in a direction normal to the top surface of the insulating layer, wherein the semiconductor pattern comprises a predetermined portion and a waveguide portion connected to the predetermined portion;
- and
- performing a doping process on the predetermined portion of the semiconductor pattern to convert the predetermined portion into an optical attenuator,
- wherein the optical attenuator has a gradient dopant concentration decreasing in the direction after the doping process.
Dependencies are inferred from the claim text.