Radiation detector
AssigneeKabushiki Kaisha Toshiba
InventorsIsao Takasu, Atsushi Wada, Fumihiko Aiga, Kohei Nakayama, Yuko Nomura
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Abstract
According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.
Claims5
A radiation detector, comprising:
- a first layer including a first organic substance,
- the first layer emits light based on beta rays incident on the first layer, and
- a period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns;
- a first conductive layer;
- a second conductive layer located between the first layer and the first conductive layer;
- and
- an organic semiconductor layer located between the first conductive layer and the second conductive layer, wherein
- the period is not less than 0.1 s/m and not more than 100 s/m per unit thickness of the organic semiconductor layer.
Dependencies are inferred from the claim text.