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AssigneeQilu University of Technology
InventorsGuowei Zhou, Jing Ren, Qinghua Gong, Bin Sun, Tingting Gao, Xuefeng Sun
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The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi2WO6 is an orthorhombic system, Bi2S3 is a p-type semiconductor located on a (130) crystal face, MoS2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi2WO6/Bi2S3/MoS2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.
A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material, composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, wherein Bi2WO6 is an orthorhombic system, Bi2S3 is a p-type semiconductor located on a (130) crystal face, MoS2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets forms an outer layer;
Dependencies are inferred from the claim text.