Method for manufacturing a mould for nanoprinting and associated mould
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsHubert Teyssedre, Nicolas Posseme, Stefan Landis
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Abstract
A method for manufacturing a mould for nanoprinting and the associated mould, includes providing a substrate having a layer, and at least one ion implantation configured so as to obtain in the layer, at least one first non-implanted portion or portion having a first implantation, at least one second portion having a second implantation, and a third non-implanted portion distinct from the first portion. After implantation, the method includes etching the layer configured so as to have a different etching speed between at least the second portion and the third portion, so as to etch through the openings of an etching mask, a plurality of patterns of different heights being included in the layer.
Claims18
A method for manufacturing a mould for nanoprinting, comprising:
- providing a substrate comprising a layer having an upper face and a lower face opposite the upper face,
- at least one ion implantation in at least one portion of the layer, the at least one ion implantation being configured so as to obtain within the layer at least one first portion, non-implanted or having a first implantation, and at least one second portion having a second implantation, the first implantation and the second implantation being different, the first and second portions each extending from the upper face, the at least one ion implantation further defining a third non-implanted portion, extending at least from the first portion, to the lower face of the layer,
- after or before implantation, producing an etching mask, surmounting the upper face and having a plurality of openings, and
- after implantation, etching the layer configured so as to have a different etching speed at least between the second portion and the third portion, so as to etch through the openings of the etching mask, a plurality of patterns of different heights included in the layer, at least one pattern extending into the first portion and at least one pattern extending into the second portion, the etching being configured to etch in the first portion, a first set of patterns and to etch in the second portion, a second set of patterns:
- i. the first set of patterns having a first pattern density D1 and a first height H1, and
- ii. the second set of patterns having a second pattern density D2, and a second height H2, and wherein D2>D1.
Dependencies are inferred from the claim text.