Nanomaterial, preparation method thereof, and semiconductor device

A preparation method of a nanomaterial comprising:

• providing an initial ZnO nanocrystal solution, a solute of the initial ZnO nanocrystal solution including a ZnO nanocrystal having a first surface ligand;
• preparing a solution of a second surface ligand, the second surface ligand having a structure of
• wherein:
• R1, R2, and R3 are independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, or a hydrogen atom;
• R4 is selected from a hydrocarbon group having a carbon number of 5 to 60;
• a carbon number of the alkyl group ranges from 1 to 5;
• a carbon number of the alkoxy group ranges from 1 to 5;
• and
• a carbon number of the hydroxyalkoxy group ranges from 1 to 5;
• and
• mixing the initial ZnO nanocrystal solution and the solution of the second surface ligand to cause a displacement reaction between the first surface ligand on the initial ZnO nanocrystal surface and the second surface ligand to prepare the ZnO nanocrystal with a surface bonded with the second surface ligand.

A semiconductor device comprising:

• an anode and a cathode opposite to each other;
• an active layer between the anode and the cathode;
• and
• an electron transport layer between the active layer and the cathode, a material of the electron transport layer including a nanomaterial, the nanomaterial including a ZnO nanocrystal and a surface ligand bonded to the ZnO nanocrystal, and the surface ligand having a structure of
• wherein:
• R1, R2, and R3 are independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, or a hydrogen atom;
• R4 is selected from a hydrocarbon group having a carbon number of 5 to 60;
• a carbon number of the alkyl group ranges from 1 to 5;
• a carbon number of the alkoxy group ranges from 1 to 5;
• and
• a carbon number of the hydroxyalkoxy group ranges from 1 to 5.