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US 12,230,727 B2Granted
Contacts for solar cells
AssigneeMaxeon Solar Pte. Ltd.
InventorsMatthieu Moors, David D. Smith, Gabriel Harley, Taeseok Kim
Life of this patent
Estimating the term…
Abstract
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
Claims20
A solar cell, comprising:
- an N-type doped region and a P-type doped region on the solar cell, wherein the N-type doped region and the P-type doped region are located at a back surface of the solar cell;
- a dielectric layer directly on the N-type doped region and the P-type doped region, the dielectric layer having a first dissociated region and a second dissociated region therein, wherein the first dissociated region is in contact with the N-type doped region, and the second dissociated region is in contact with the P-type doped region, and wherein the first and second dissociated regions comprise dissociated material of the dielectric layer;
- and
- a first metal layer and a second metal layer directly on the dielectric layer, the first metal layer in contact with the dissociated material of the first dissociated region of the dielectric layer, and the second metal layer in contact with the dissociated material of the second dissociated region of the dielectric layer, wherein the dissociated material of the first dissociated region of the dielectric layer is vertically between and physically contacts both the first metal layer and the N-type doped region, and wherein the dissociated material of the second dissociated region of the dielectric layer is vertically between and physically contacts both the second metal layer and the P-type doped region.
1 more element
A method of fabricating a solar cell, the method comprising:
- forming an N-type doped region and a P-type doped region on the solar cell, wherein the N-type doped region and the P-type doped region are located at a back surface of the solar cell;
- forming a dielectric layer directly on the N-type doped region and the P-type doped region, the dielectric layer having a first dissociated region and a second dissociated region therein, wherein the first dissociated region is in contact with the N-type doped region, and the second dissociated region is in contact with the P-type doped region, and wherein the first and second dissociated regions comprise dissociated material of the dielectric layer;
- and
- forming a first metal layer and a second metal layer directly on the dielectric layer, the first metal layer in contact with the dissociated material of the first dissociated region of the dielectric layer, and the second metal layer in contact with the dissociated material of the second dissociated region of the dielectric layer, wherein the dissociated material of the first dissociated region of the dielectric layer is vertically between and physically contacts both the first metal layer and the N-type doped region, and wherein the dissociated material of the second dissociated region of the dielectric layer is vertically between and physically contacts both the second metal layer and the P-type doped region.
1 more element
Dependencies are inferred from the claim text.