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US 12,230,457 B2Granted
Method for manufacturing a MEMS switch having an embedded metal contact
AssigneeRobert Bosch GmbH
InventorsJochen Reinmuth, Matthew Lewis, Peter Schmollngruber
Life of this patent
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Abstract
A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer. A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion. A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.
Claims12
A method for manufacturing a MEMS switch that includes at least one embedded metal contact, including the following steps:
- A) providing a substrate, wherein a silicon layer is situated on the substrate;
- B) introducing narrow trenches into the silicon layer using anisotropic etching;
- C) filling the narrow trenches by deposition of a first metal layer;
- D) removing the first metal layer at a surface of the silicon layer, the first metal layer remaining in the narrow trenches and thus creating at least one embedded metal contact;
- H) structuring the silicon layer via a trenching process, a fixed portion and a switching element being formed, and a contact area of the at least one embedded metal contact being exposed with respect to the silicon layer,
- wherein the contact area includes a first contact area and an oppositely situated second contact area, wherein the first contact area and the second contact area are exposed with respect to the silicon layer,
- wherein the first metal layer is situated at a side of the silicon layer facing away from the substrate.
4 more elements
A method for manufacturing a MEMS switch that includes at least one embedded metal contact, including the following steps:
- A) providing a substrate that includes a silicon layer;
- B) introducing narrow trenches into the silicon layer using anisotropic etching;
- C) filling the narrow trenches by deposition of a first metal layer;
- D) removing the first metal layer at a surface of the silicon layer, the first metal layer remaining in the narrow trenches and thus creating at least one embedded metal contact;
- H) structuring the silicon layer via a trenching process, a fixed portion and a switching element being formed, and a contact area of the at least one embedded metal contact being exposed with respect to the silicon layer,
- wherein the contact area includes a first contact area and an oppositely situated second contact area, wherein the first contact area and the second contact area are exposed with respect to the silicon layer,
- wherein a substrate including a first insulating layer and the silicon layer is provided in step A, and after step H, the first insulating layer is etched below a structured area of the silicon layer in a step I, the switching element being exposed and made movable.
4 more elements
A method for manufacturing a MEMS switch that includes at least one embedded metal contact, including the following steps:
- A) providing a substrate that includes a silicon layer;
- B) introducing narrow trenches into the silicon layer using anisotropic etching;
- C) filling the narrow trenches by deposition of a first metal layer;
- D) removing the first metal layer at a surface of the silicon layer, the first metal layer remaining in the narrow trenches and thus creating at least one embedded metal contact;
- H) structuring the silicon layer via a trenching process, a fixed portion and a switching element being formed, and a contact area of the at least one embedded metal contact being exposed with respect to the silicon layer,
- wherein the contact area includes a first contact area and an oppositely situated second contact area, wherein the first contact area and the second contact area are exposed with respect to the silicon layer,
- wherein after step D, narrow, continuous trenches extending to a first insulating layer are etched into the silicon layer in a step E, and a dielectric material is subsequently deposited and structured on the silicon layer in a step F, the continuous trenches being filled with the dielectric material.
4 more elements
A method for manufacturing a MEMS switch that includes at least one embedded metal contact, including the following steps:
- A) providing a substrate, wherein a silicon layer is situated on the substrate;
- B) introducing narrow trenches into the silicon layer using anisotropic etching;
- C) filling the narrow trenches by deposition of a first metal layer;
- D) removing the first metal layer at a surface of the silicon layer, the first metal layer remaining in the narrow trenches and thus creating at least one embedded metal contact;
- H) structuring the silicon layer via a trenching process, a fixed portion and a movable switching element being formed, and a contact area of the at least one embedded metal contact being exposed with respect to the silicon layer,
- wherein the contact area includes a first contact area and an oppositely situated second contact area, wherein the first contact area and the second contact area are exposed with respect to the silicon layer,
- and
- wherein the first metal layer is situated at a side of the silicon layer facing away from the substrate and forms at least one switchable electrical contact between the fixed portion and the switching element.
5 more elements
A method for manufacturing a MEMS switch that includes at least one embedded metal contact, including the following steps:
- A) providing a substrate that includes a silicon layer;
- B) introducing narrow trenches into the silicon layer using anisotropic etching;
- C) filling the narrow trenches by deposition of a first metal layer;
- D) removing the first metal layer at a surface of the silicon layer, the first metal layer remaining in the narrow trenches and thus creating at least one embedded metal contact;
- H) structuring the silicon layer via a trenching process, a fixed portion and a switching element being formed, and a contact area of the at least one embedded metal contact being exposed with respect to the silicon layer,
- wherein the contact area includes a first contact area and an oppositely situated second contact area, wherein the first contact area and the second contact area are exposed with respect to the silicon layer,
- wherein the first metal layer is made of tungsten.
4 more elements
Dependencies are inferred from the claim text.