Imprint management for memory

A method, comprising:

• writing a first set of logic states to a subset of memory cells of a memory array;
• reading the subset of memory cells to obtain a second set of logic states that are based at least in part on the first set of logic states;
• determining that a quantity of differences between the second set of logic states and the first set of logic states satisfies a threshold that is based at least in part on a fixed reference voltage for reading the subset of memory cells;
• and
• performing a recovery operation on the memory array based at least in part on the quantity of differences satisfying the threshold.

An apparatus, comprising:

• one or more controllers associated with a memory array, wherein the one or more controllers are configured to cause the apparatus to:
• write a first set of logic states to a subset of memory cells of the memory array;
• read, using a reference voltage, the subset of memory cells to obtain a second set of logic states that are based at least in part on the first set of logic states;
• determine a quantity of differences between the second set of logic states and the first set of logic states based at least in part on reading at the reference voltage;
• and
• perform a recovery operation on the memory array based at least in part on comparing the quantity of differences to an expected quantity of differences that corresponds to the reference voltage.