# US 12,225,808 B2 · In-line monitoring of OLED layer thickness and dopant concentration > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,808 B2 - Document ID: US12225808B2 - Status: Granted - Kind: B2 - Application number: 18/395,081 - Filed: 2023-12-22 - Published: 2024-04-18 - Granted: 2025-02-11 - Earliest claimed: 2020-01-22 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Yeishin Tung; Byung Sung Kwak; Robert Jan Visser; Guoheng Zhao; Todd J. Egan; Dinesh Kabra; Gangadhar Banappanavar - Web page: https://patentgrep.com/patent/US12225808B2 ## CPC - H10P 72/0461: {characterised by the presence of two or more transfer chambers} - C23C 14/12: Organic material - C23C 14/24: Vacuum evaporation - C23C 14/50: Substrate holders - C23C 14/54: Controlling or regulating the coating process - C23C 14/568: {Transferring the substrates through a series of coating stations (C23C14/562 takes precedence)} - H10K 71/164: {using vacuum deposition} - H10K 71/70: Testing, e.g. accelerated lifetime tests - H10P 72/0464: {characterised by the construction of the transfer chamber} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - G01N 21/6489: {Photoluminescence of semiconductors} - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system. ## Claims ### Claim 1 A metrology system comprising: a chamber to hold a workpiece under vacuum conditions, the chamber including a support to hold the workpiece; a first light source to generate a first light beam that impinges a surface of the workpiece at an oblique angle to induce photoluminescence in a layer on the workpiece in the chamber; a second light source to generate a second light beam that impinges the surface of the workpiece at a normal angle to be reflected from the layer on the workpiece; a detector assembly including optical components to collect on a common optical path both photoluminescent light emitted by the layer substantially normal to the surface and reflected light that is reflected from the workpiece substantially normal to the surface, a first detector to measure an intensity of the photoluminescent light, a second detector to measure an intensity of the reflected light, and a beam splitter on the common optical path to direct at least a portion of the photoluminescent light to the first detector and at least a portion of the reflected light to the second detector; and a control system configured to receive the measured intensity of the photoluminescent light, receive the measured intensity of the reflected light and generate a thickness measurement for the layer therefrom, and determine a doping concentration of the layer from the thickness measurement and the measured intensity of the photoluminescent light. ### Claim 2 (depends on 1) The system of claim 1, wherein the first detector comprises a spectrometer. ### Claim 3 (depends on 1) The system of claim 1, wherein the second light source and second detector comprise an interferometer. ### Claim 4 (depends on 1) The system of claim 1, wherein the second light source and second detector comprise a digital holographic microscope. ### Claim 5 (depends on 4) The system of claim 4, wherein the second detector comprises a CCD camera. ### Claim 6 (depends on 1) The system of claim 1, wherein the detector assembly includes a metrology head positioned within the chamber, and wherein the first detector and the second detector are positioned outside the chamber. ### Claim 7 (depends on 6) The system of claim 6, wherein the metrology head includes an optical fiber to transmit light collected in the chamber to the first detector and the second detector. ### Claim 8 (depends on 7) The system of claim 7, wherein the optical fiber transmits light from the second light source to the workpiece. ### Claim 9 (depends on 6) The system of claim 6, wherein the metrology head is movable within the chamber. ### Claim 10 (depends on 9) The system of claim 9, comprising a height sensor secured to the metrology head to measure a height of the metrology head above the workpiece. ### Claim 11 (depends on 9) The system of claim 9, comprising a tilt sensor secured to the metrology head to measure a tilt of the metrology head relative to the surface of the workpiece. ### Claim 12 (depends on 6) The system of claim 6, wherein the metrology head comprises an objective lens. ### Claim 13 (depends on 1) The system of claim 1, wherein the support is configured to hold the workpiece stationary as the first detector measures the intensity of the photoluminescent light and as the second detector measures the intensity of the reflected light. ### Claim 14 (depends on 1) The system of claim 1, comprising a workpiece transport system configured to transfer a workpiece into and out of the chamber under vacuum conditions. ### Claim 15 (depends on 14) The system of claim 14, the chamber comprises a transfer chamber positioned on a path of the workpiece between deposition chambers as provided by the workpiece transport system.