# US 12,225,794 B2 · Display apparatus and method of manufacturing the same

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- Number: US 12,225,794 B2
- Document ID: US12225794B2
- Status: Granted
- Kind: B2
- Application number: 18/373,277
- Filed: 2023-09-27
- Published: 2024-01-18
- Granted: 2025-02-11
- Earliest claimed: 2021-07-27
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Soyoung Koo; Eoksu Kim; Hyungjun Kim; Yunyong Nam; Junhyung Lim; Kyungjin Jeon
- Web page: https://patentgrep.com/patent/US12225794B2

## CPC

- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- G09G 3/3266: Details of drivers for scan electrodes
- G09G 3/3291: in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- G09G 2300/0426: Layout of electrodes and connections
- H10K 50/865: {comprising light absorbing layers, e.g. light-blocking layers}
- H10K 59/1201: {Manufacture or treatment}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)

## Abstract

A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

## Claims

### Claim 1

A method of manufacturing a display apparatus, the method comprising:
forming a conductive mound on a substrate;
forming a first insulating mound on the substrate; and
forming a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound,
wherein the second region of the semiconductor layer substantially covers an upper surface of the first insulating mound, and
wherein the first insulating mound includes organic material.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the semiconductor layer comprises:
forming a semiconductor material layer on the substrate;
forming a photoresist pattern on the semiconductor material layer; and
etching at least a portion of the semiconductor material layer by using the photoresist pattern as an etch mask,
wherein the forming of the first insulating mound comprises:
forming an insulating material layer on the conductive mound; and
etching at least a portion of the insulating material layer by using the photoresist pattern as an etch mask.

### Claim 3 (depends on 1)

The method of claim 1, further comprising forming a second insulating mound between the conductive mound and the first region of the semiconductor layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein the forming of the first insulating mound is performed simultaneously with the forming of the second insulating mound.

### Claim 5 (depends on 3)

The method of claim 3, wherein the forming of the semiconductor layer comprises:
forming a semiconductor material layer on the substrate;
forming a photoresist pattern on the semiconductor material layer; and
etching at least a portion of the semiconductor material layer by using the photoresist pattern as an etch mask,
wherein the forming of the second insulating mound comprises:
forming an insulating material layer on the conductive mound; and
etching at least a portion of the insulating material layer by using the photoresist pattern as an etch mask.