# US 12,225,783 B2 · High screen ratio organic light emitting diode display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,783 B2 - Document ID: US12225783B2 - Status: Granted - Kind: B2 - Application number: 16/603,436 - Filed: 2019-07-18 - Published: 2022-02-03 - Granted: 2025-02-11 - Earliest claimed: 2018-12-18 - Assignees: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. - Applicants: Wuhan China Star Optoetronics Semiconductor Display Technology Co., Ltd. - Inventors: Yexi Sun - Web page: https://patentgrep.com/patent/US12225783B2 ## CPC - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 59/873: {Encapsulations} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract An organic light-emitting diode display panel includes a display area, a transparent area, and a wire exchange area. The display area is used for displaying an image; the transparent area is used for placing a device, and the wire exchange area is positioned at a wire connecting site between the display area and the transparent area, wherein a metal wire from the display area is electrically connected to a high light-transmissive metal wire through a via-hole at the wire exchange area, and the high light-transmissive metal wire extends to the transparent area. ## Claims ### Claim 1 An organic light-emitting diode display panel comprising: a display area for displaying images; a transparent area for placing a device; and a wire exchange area, positioned at a wire connecting site between the display area and the transparent area; wherein the wire exchange area comprises a substrate, an inorganic buffer layer, an active semiconductor layer, a third-metal wire, an inorganic insulating layer, a first-high light-transmissive metal wire, a first-metal wire, an organic planarization layer, a second-high light-transmissive metal wire, an organic opening layer, a cathode layer, and an encapsulation layer which are stacked in sequence, the first metal wire is electrically connected to the second-high light-transmissive metal wire through a first via hole, the third metal wire is electrically connected to the first-high light-transmissive metal wire through a second via hole, and the first-high light-transmissive metal wire and the second-high light-transmissive metal wire extend to the transparent area. ### Claim 2 (depends on 1) The organic light-emitting diode display panel according to claim 1, wherein the first high light-transmissive metal wire and the second-high light-transmissive metal wire are each composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO). ### Claim 3 (depends on 1) The organic light-emitting diode display panel according to claim 1, wherein a film layer structure of the display area comprises the substrate, the inorganic buffer layer, the active semiconductor layer, the inorganic insulating layer, the first-metal wire, a second-metal wire, the third-metal wire, the organic planarization layer, an anode layer, the organic opening layer, a luminescent material layer, the cathode layer, and the encapsulation layer. ### Claim 4 (depends on 1) The organic light-emitting diode display panel according to claim 1, wherein a film layer structure of the transparent area comprises the substrate, the inorganic buffer layer, the active semiconductor layer, the inorganic insulating layer, the first-high light-transmissive metal wire, the second-high light-transmissive metal wire, the organic planarization layer, the organic opening layer, the cathode layer, and the encapsulation layer. ### Claim 5 (depends on 3) The organic light-emitting diode display panel according to claim 3, wherein the anode layer and the first-metal wire are electrically connected through a third via-hole. ### Claim 6 (depends on 3) The organic light-emitting diode display panel according to claim 3, wherein the first-metal wire and the active semiconductor layer are electrically connected through a fourth via-hole. ### Claim 7 (depends on 3) The organic light-emitting diode display panel according to claim 3, wherein the substrate is composed of polyimide. ### Claim 8 (depends on 3) The organic light-emitting diode display panel according to claim 3, wherein the organic planarization layer and the organic opening layer are composed of transparent organic materials. ### Claim 9 An organic light-emitting diode display panel comprising: a display area for displaying images, a film layer structure of the display area comprises a substrate, an inorganic buffer layer, an active semiconductor layer, an inorganic insulating layer, a first-metal wire, a second-metal wire, a third-metal wire, an organic planarization layer, an anode layer, an organic opening layer, a luminescent material layer, a cathode layer, and an encapsulation layer; a transparent area for placing a device, a film layer structure of the transparent area comprises the substrate, the inorganic buffer layer, the active semiconductor layer, the inorganic insulating layer, a first-high light-transmissive metal wire, a second-high light-transmissive metal wire, the organic planarization layer, the organic opening layer, the cathode layer, and the encapsulation layer; and a wire exchange area, positioned at a wire connecting site between the display area and the transparent area, a film layer structure of the wire exchange area comprises the substrate, the inorganic buffer layer, the active semiconductor layer, the inorganic insulating layer, the first-metal wire, the first-high light-transmissive metal wire, the second-high light-transmissive metal wire, the third-metal wire, the organic planarization layer, the organic opening layer, the cathode layer, and the encapsulation layer; wherein the first metal wire is electrically connected to the second-high light-transmissive metal wire through a first via hole, the third metal wire is electrically connected to the first-high light-transmissive metal wire through a second via hole, and the first-high light-transmissive metal wire and the second-high light-transmissive metal wire extend to the transparent area. ### Claim 10 (depends on 9) The organic light-emitting diode display panel according to claim 9, wherein the first high light-transmissive metal wire and the second-high light-transmissive metal wire are each composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO). ### Claim 11 (depends on 9) The organic light-emitting diode display panel according to claim 9, wherein the anode layer and the first-metal wire are electrically connected through a third via-hole at the display area. ### Claim 12 (depends on 9) The organic light-emitting diode display panel according to claim 9, wherein the first-metal wire and the active semiconductor layer are electrically connected through a fourth via-hole at the display area. ### Claim 13 (depends on 9) The organic light-emitting diode display panel according to claim 9, wherein the substrate is composed of polyimide. ### Claim 14 (depends on 9) The organic light-emitting diode display panel according to claim 9, wherein the organic planarization layer and the organic opening layer are composed of transparent organic materials. ### Claim 15 An organic light-emitting diode display panel comprising: a display area for displaying images; a transparent area for placing a device; and a wire exchange area, positioned at a wire connecting site between the display area and the transparent area; the wire exchange area comprises a substrate, an inorganic buffer layer, an active semiconductor layer, a third-metal wire, an inorganic insulating layer, a first-high light-transmissive metal wire, a first-metal wire, an organic planarization layer, a second-high light-transmissive metal wire, an organic opening layer, a cathode layer, and an encapsulation layer which are stacked in sequence; the first metal wire is electrically connected to the second-high light-transmissive metal wire through a first via hole, the third metal wire is electrically connected to the first-high light-transmissive metal wire through a second via hole, and the first-high light-transmissive metal wire and the second-high light-transmissive metal wire extend to the transparent area; wherein the first high light-transmissive metal wire and the second-high light-transmissive metal wire are each composed of at least one of indium gallium zinc oxide (InGaZnO), indium gallium oxide (InGaO), indium tin zinc oxide (ITZO), and aluminum zinc oxide (AlZnO); and wherein a film layer structure of the display area comprises the substrate, the inorganic buffer layer, the active semiconductor layer, the inorganic insulating layer, the first-metal wire, a second-metal wire, the third-metal wire, the organic planarization layer, an anode layer, the organic opening layer, a luminescent material layer, the cathode layer, and the encapsulation layer.