# US 12,225,761 B2 · Display device and fabrication method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,761 B2 - Document ID: US12225761B2 - Status: Granted - Kind: B2 - Application number: 17/043,781 - Filed: 2019-04-25 - Published: 2021-01-21 - Granted: 2025-02-11 - Earliest claimed: 2018-05-11 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hisao Ikeda; Tomoya Aoyama; Kensuke Yoshizumi - Web page: https://patentgrep.com/patent/US12225761B2 ## CPC - G02B 5/201: {in the form of arrays} - G02B 5/288: {comprising at least one thin film resonant cavity, e.g. in bandpass filters} - G06F 1/1609: {to support filters or lenses} - G06F 3/011: {Arrangements for interaction with the human body, e.g. for user immersion in virtual reality (blind teaching G09B21/00)} - G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00) - H05B 33/12: Light sources with substantially two-dimensional [2D] radiating surfaces - H05B 33/24: of metallic reflective layers (H05B33/26 takes precedence) - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/35: comprising red-green-blue [RGB] subpixels - H10K 59/80517: {Multilayers, e.g. transparent multilayers} - H10K 59/876: {comprising a resonant cavity structure, e.g. Bragg reflector pair} - H10K 59/878: {comprising reflective means} - G02B 27/0172: {characterised by optical features} - G02B 2027/0178: {Eyeglass type (eyeglass details G02C)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/131: Interconnections, e.g. wiring lines or terminals - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A high-resolution display device is provided. The display device includes a plurality of light-emitting units emitting light of different colors. The light-emitting unit has a microcavity structure and intensifies light with a specific wavelength. In the light-emitting units emitting light of different colors, reflective layers with different thicknesses are formed, an insulating layer is formed to cover the reflective layers, and then a top surface of the insulating layer is subjected to planarization treatment, whereby an insulating layer with different thicknesses is formed. After that, light-emitting elements emitting white light are formed over the planarized top surface of the insulating layer to overlap with the respective reflective layers, whereby the light-emitting units that intensify different colors due to different optical path lengths are separately formed. ## Claims ### Claim 1 A display device comprising: a first optical adjustment layer and a second optical adjustment layer; a first insulating layer over the first optical adjustment layer and the second optical adjustment layer; a first plug and a second plug over the first insulating layer; a first light-emitting element over the first insulating layer, the first light-emitting element overlapping with the first optical adjustment layer and electrically connected to the first plug; and a second light-emitting element over the first insulating layer, the second light-emitting element overlapping with the second optical adjustment layer and electrically connected to the second plug, wherein each of the first light-emitting element and the second light-emitting element comprises a lower electrode having a light-transmitting property, a light-emitting layer, and an upper electrode having a semi-transmissive property and a semi-reflective property, wherein at least top surfaces of the first optical adjustment layer and the second optical adjustment layer are each configured to reflect visible light, wherein the first optical adjustment layer is thinner than the second optical adjustment layer, wherein the first plug is positioned inside a first opening of the first insulating layer, wherein the second plug is positioned inside a second opening of the first insulating layer, wherein the first plug is electrically connected to the first optical adjustment layer, wherein the second plug is electrically connected to the second optical adjustment layer, wherein the first optical adjustment layer serves as one electrode of a first capacitor, and wherein the second optical adjustment layer serves as one electrode of a second capacitor. ### Claim 2 (depends on 1) The display device according to claim 1, further comprising a third light-emitting element and a third optical adjustment layer, wherein at least a top surface of the third optical adjustment layer is configured to reflect visible light, wherein the third optical adjustment layer is thicker than the first optical adjustment layer and the second optical adjustment layer, and wherein a lower electrode of the third light-emitting element is in contact with the top surface of the third optical adjustment layer. ### Claim 3 (depends on 1) The display device according to claim 1, wherein the first optical adjustment layer comprises a first film, wherein the second optical adjustment layer comprises a second film and a third film, and wherein the first film and the third film are formed by processing the same film. ### Claim 4 (depends on 1) The display device according to claim 1, wherein the first optical adjustment layer has conductivity, and wherein the first optical adjustment layer and the lower electrode of the first light-emitting element are electrically connected to each other. ### Claim 5 (depends on 1) The display device according to claim 1, further comprising: a second insulating layer below the first optical adjustment layer; and a circuit layer comprising a transistor below the second insulating layer, wherein the transistor and the first light-emitting element are electrically connected to each other. ### Claim 6 (depends on 5) The display device according to claim 5, wherein a channel formation region of the transistor comprises a metal oxide having crystallinity or single crystal silicon. ### Claim 7 A display device comprising: a first optical adjustment layer and a second optical adjustment layer; a first insulating layer over the first optical adjustment layer and the second optical adjustment layer; a first light-emitting element over the first insulating layer, the first light-emitting element overlapping with the first optical adjustment layer; and a second light-emitting element over the first insulating layer, the second light-emitting element overlapping with the second optical adjustment layer, wherein each of the first light-emitting element and the second light-emitting element comprises a lower electrode having a light-transmitting property, a light-emitting layer, and an upper electrode having a semi-transmissive property and a semi-reflective property, wherein at least top surfaces of the first optical adjustment layer and the second optical adjustment layer are each configured to reflect visible light, wherein the first optical adjustment layer is thinner than the second optical adjustment layer, and wherein the lower electrode of the first light-emitting element is thicker than the lower electrode of the second light-emitting element. ### Claim 8 (depends on 7) The display device according to claim 7, further comprising a third light-emitting element and a third optical adjustment layer, wherein at least a top surface of the third optical adjustment layer is configured to reflect visible light, wherein the third optical adjustment layer is thicker than the first optical adjustment layer and the second optical adjustment layer, and wherein a lower electrode of the third light-emitting element is in contact with the top surface of the third optical adjustment layer. ### Claim 9 (depends on 7) The display device according to claim 7, wherein the lower electrode of the first light-emitting element is positioned inside a first opening of the first insulating layer, and wherein the lower electrode of the second light-emitting element is positioned inside a second opening of the first insulating layer. ### Claim 10 (depends on 7) The display device according to claim 7, wherein the first optical adjustment layer comprises a first film, wherein the second optical adjustment layer comprises a second film and a third film, and wherein the first film and the third film are formed by processing the same film. ### Claim 11 (depends on 7) The display device according to claim 7, wherein the first optical adjustment layer has conductivity, and wherein the first optical adjustment layer and the lower electrode of the first light-emitting element are electrically connected to each other. ### Claim 12 (depends on 7) The display device according to claim 7, further comprising: a second insulating layer below the first optical adjustment layer; and a circuit layer comprising a transistor below the second insulating layer, wherein the transistor and the first light-emitting element are electrically connected to each other. ### Claim 13 (depends on 12) The display device according to claim 12, wherein a channel formation region of the transistor comprises a metal oxide having crystallinity or single crystal silicon.