# US 12,225,750 B2 · Organic electroluminescence display device

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- Number: US 12,225,750 B2
- Document ID: US12225750B2
- Status: Granted
- Kind: B2
- Application number: 18/407,374
- Filed: 2024-01-08
- Published: 2024-05-02
- Granted: 2025-02-11
- Earliest claimed: 2018-04-24
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Jungjin Yang; Myunghwan Kim; Seohyun Kim; Ji-young Kim; Jinwoo Park; Wonjun Song; Taewoong Yoo; Soojung Youn; Kwanhee Lee; Seokjae Lee
- Web page: https://patentgrep.com/patent/US12225750B2

## CPC

- H10K 59/35: comprising red-green-blue [RGB] subpixels
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K 50/19: Tandem OLEDs
- H10K 59/32: Stacked devices having two or more layers, each emitting at different wavelengths
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic electroluminescence display device includes: a substrate; a first electrode including a first sub-electrode and a second sub-electrode spaced apart from each other and on the substrate; a first light emitting unit on the first electrode; a charge generation unit on the first light emitting unit; a second light emitting unit on the charge generation unit; and a second electrode on the second light emitting unit, wherein the first light emitting unit comprises a first light emitting layer correspondingly on the first sub-electrode; and a second light emitting layer correspondingly on the second sub-electrode, wherein the second light emitting unit comprises a third light emitting layer correspondingly on the first light emitting layer; and a fourth light emitting layer correspondingly on the second light emitting layer.

## Claims

### Claim 1

A light emitting display device comprising:
a display panel including a first light emitting region, a second light emitting region, a third light emitting region, and a non-light emitting region; and
an additional member on the display panel,
wherein the display panel comprises:
a substrate comprising a base layer and a circuit layer on the base layer;
a first electrode comprising a first sub-electrode on the first light emitting region; a second sub-electrode on the second light emitting region; and a third sub-electrode on the third light emitting region;
a pixel defining layer on the non-light emitting region;
a first light emitting unit on the first electrode;
a charge generation unit comprising an n-type charge generation layer on the first light emitting unit and a p-type charge generation layer on the n-type charge generation layer;
a second light emitting unit on the charge generation unit; and
a second electrode on the second light emitting unit,
wherein the first light emitting unit comprises a first red light emitting layer on the first sub-electrode, a first green light emitting layer on the second sub-electrode, and a first blue light emitting layer on the third sub-electrode,
wherein the n-type charge generation layer comprises an electron transport material and an n-type dopant, and the p-type charge generation layer comprises a hole transport material and a p-type dopant,
wherein the second light emitting unit comprises a second red light emitting layer on the first red light emitting layer, a second green light emitting layer on the first green light emitting layer; and a second blue light emitting layer on the first blue light emitting layer, and
wherein a portion of the n-type charge generation layer is located on the pixel defining layer, and the p-type charge generation layer is not located on the pixel defining layer.

### Claim 2 (depends on 1)

The light emitting display device of claim 1, wherein the pixel defining layer comprises silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy).

### Claim 3 (depends on 1)

The light emitting display device of claim 1, wherein the pixel defining layer comprises a polyacrylate resin or a polyimide resin.

### Claim 4 (depends on 3)

The light emitting display device of claim 3, wherein the pixel defining layer further comprises at least one selected from an inorganic material, a light absorbing material, a black pigment, or a black dye.

### Claim 5 (depends on 1)

The light emitting display device of claim 1, wherein a doping ratio of the p-type dopant in the p-type charge generation layer is 2 wt % to 15 wt %.

### Claim 6 (depends on 1)

The light emitting display device of claim 1, wherein
the n-type dopant is an inorganic material, and
the p-type dopant is an organic material or an inorganic material.

### Claim 7 (depends on 6)

The light emitting display device of claim 6, wherein
the n-type dopant is Yb, and
the p-type dopant is the organic material comprising a cyano group and a fluorine atom.

### Claim 8 (depends on 6)

The light emitting display device of claim 6, wherein the p-type dopant is at least one selected from a quinone derivative, a metal oxide, a cyano group-containing compound, or a metal halide.

### Claim 9 (depends on 1)

The light emitting display device of claim 1, wherein a conductivity of the p-type charge generation layer is equal to or less than about 1.5×10−6 s/m.

### Claim 10 (depends on 1)

The light emitting display device of claim 1, wherein
the additional member is at least one selected from an input sensing unit, an optical member, or a window member.

### Claim 11 (depends on 1)

The light emitting display device of claim 1, wherein a thickness of the n-type charge generation layer is 50 Å to 300 Å, and a thickness of the p-type charge generation layer is 50 Å to 200 Å.

### Claim 12 (depends on 1)

The light emitting display device of claim 1, wherein a thickness of the first red light emitting layer is greater than a thickness of the first green light emitting layer, and the thickness of the first green light emitting layer is greater than a thickness of the first blue light emitting layer, and
wherein a thickness of the second red light emitting layer is greater than a thickness of the second green light emitting layer, and the thickness of the second green light emitting layer is greater than a thickness of the second blue light emitting layer.

### Claim 13 (depends on 1)

The light emitting display device of claim 1, wherein
the base layer is a glass substrate, a metal substrate, or a plastic substrate, and
the circuit layer comprises a first intermediate inorganic film and a second intermediate inorganic film on the first intermediate inorganic film.

### Claim 14 (depends on 13)

The light emitting display device of claim 13, wherein the circuit layer comprises a plurality of transistors on a buffer film between the base layer and the circuit layer, and
wherein the buffer film comprises silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy).

### Claim 15 (depends on 1)

The light emitting display device of claim 1, wherein the p-type charge generation layer comprises:
a first p-type charge generation layer corresponding to the first light emitting region;
a second p-type charge generation layer corresponding to the second light emitting region; and
a third p-type charge generation layer corresponding to the third light emitting region.

### Claim 16 (depends on 15)

The light emitting display device of claim 15, wherein the first p-type charge generation layer, the second p-type charge generation layer, and the third p-type charge generation layer are spaced from each other.

### Claim 17 (depends on 1)

The light emitting display device of claim 1, wherein a doping ratio of the n-type dopant is 1 wt % to 10 wt %.

### Claim 18 (depends on 1)

The light emitting display device of claim 1, wherein
the first blue light emitting layer is configured to emit a first blue light having a first central wavelength, and the second blue light emitting layer is configured to emit a second blue light having a second central wavelength different from the first central wavelength.

### Claim 19

A light emitting display device comprising:
a display panel including a first light emitting region, a second light emitting region, a third light emitting region, and a non-light emitting region; and
a protective member on the display panel,
wherein the display panel comprises:
a substrate comprising a base layer and a circuit layer on the base layer;
a first electrode comprising a plurality of sub-electrodes spaced from each other on the substrate;
a pixel defining layer located on a part of each of the sub-electrodes on the substrate;
a first light emitting unit comprising a first red light emitting layer corresponding to the first light emitting region, a first green light emitting layer corresponding to the second light emitting region, and a first blue light emitting layer corresponding to the third light emitting region on the first electrode;
a charge generation unit comprising an n-type charge generation layer on the first light emitting unit and a p-type charge generation layer on the n-type charge generation layer;
a second light emitting unit comprising a second red light emitting layer corresponding to the first light emitting region, a second green light emitting layer corresponding to the second light emitting region, and a second blue light emitting layer corresponding to the third light emitting region on the charge generation unit; and
a second electrode on the second light emitting unit, and
wherein a portion of the n-type charge generation layer is located on the pixel defining layer, and the p-type charge generation layer is not located on the pixel defining layer.

### Claim 20 (depends on 19)

The light emitting display device of claim 19, wherein the p-type charge generation layer comprises:
a first p-type charge generation layer corresponding to the first light emitting region;
a second p-type charge generation layer corresponding to the second light emitting region; and
a third p-type charge generation layer corresponding to the third light emitting region.