# US 12,225,747 B2 · Quantum dot device and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,747 B2 - Document ID: US12225747B2 - Status: Granted - Kind: B2 - Application number: 18/512,352 - Filed: 2023-11-17 - Published: 2024-07-04 - Granted: 2025-02-11 - Earliest claimed: 2022-12-27 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Won Sik Yoon; Ju Hyun Kim; Ha Il Kwon; Kwang Hee Kim; Taehyung Kim; Su Jin Park; Dae Young Chung - Web page: https://patentgrep.com/patent/US12225747B2 ## CPC - H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots - H10K 50/00: Organic light-emitting devices (integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36) - H10K 50/156: {comprising a multilayered structure} - H10K 50/16: Electron transporting layers - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device. ## Claims ### Claim 1 A quantum dot device, comprising an anode and a cathode spaced apart from each other, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots; a first hole auxiliary layer disposed between the anode and the light emitting layer, the first hole auxiliary layer comprising poly (3,4-ethylenedioxythiophene) polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed between the first hole auxiliary layer and the light emitting layer, the second hole auxiliary layer comprising a hole transport material different from a material of the first hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface of the first hole auxiliary layer comprises a surface modification region comprising a surface modification material including a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof, wherein in the first hole auxiliary layer a volume of the surface modification material is less than a volume of the PEDOT:PSS. ### Claim 2 (depends on 1) The quantum dot device of claim 1, wherein a HOMO energy level of the surface modification material is deeper than a HOMO energy level of the PEDOT:PSS and shallower than a HOMO energy level of the hole transport material. ### Claim 3 (depends on 1) The quantum dot device of claim 1, wherein a HOMO energy level of the surface modification material is about 5.20 eV to about 5.60 eV. ### Claim 4 (depends on 1) The quantum dot device of claim 1, wherein the surface modification material is represented by Chemical Formula 1: wherein, in Chemical Formula 1, Ar is a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, or any combination thereof, L is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C3 to C20 heteroarylene group, or any combination thereof, and R′ is a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a respective salt of each thereof. ### Claim 5 (depends on 4) The quantum dot device of claim 4, wherein Ar is a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, or any combination thereof. ### Claim 6 (depends on 1) The quantum dot device of claim 1, wherein a thickness of the surface modification region is about 1 volume percent to about 30 volume percent of a total thickness of the first hole auxiliary layer. ### Claim 7 (depends on 1) The quantum dot device of claim 1, wherein a thickness of the surface modification region is greater than or equal to about 1 nanometer and less than about 10 nanometers. ### Claim 8 (depends on 1) The quantum dot device of claim 1, further comprising an electron auxiliary layer between the light emitting layer and the cathode, wherein the electron auxiliary layer comprises n-type inorganic nanoparticles represented by Zn1−xQxO, wherein Q is one or more metals except Zn and 0≤x<0.5, or a mixture of the n-type inorganic nanoparticles and an alkali metal, an alkali metal compound, or any combination thereof. ### Claim 9 (depends on 1) The quantum dot device of claim 1, further comprising an electron auxiliary layer between the light emitting layer and the cathode, wherein the electron auxiliary layer comprises n-type inorganic nanoparticles represented by Zn1−xQxO, wherein Q is one or more metals other than Zn and 0≤x<0.5, or a mixture of the n-type inorganic nanoparticles and an alkali metal, an alkali metal compound, or any combination thereof. ### Claim 10 (depends on 1) An electronic device comprising the quantum dot device of claim 1. ### Claim 11 A quantum dot device, comprising an anode and a cathode spaced apart from each other, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, and a first hole auxiliary layer between the anode and the light emitting layer, wherein the first hole auxiliary layer comprises poly (3,4-ethylenedioxythiophene) polystyrenesulfonate or a derivative thereof (PEDOT:PSS) and a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof, wherein in the first hole auxiliary layer a volume of the surface modification material is less than a volume of the PEDOT:PSS. ### Claim 12 (depends on 11) The quantum dot device of claim 11, wherein the surface modification material is present at a surface of the first hole auxiliary layer. ### Claim 13 (depends on 12) The quantum dot device of claim 12, wherein a HOMO energy level of the surface of the first hole auxiliary layer is deeper than a HOMO energy level of the PEDOT:PSS. ### Claim 14 (depends on 12) The quantum dot device of claim 12, wherein the first hole auxiliary layer comprises a hole auxiliary region proximate to the anode and comprising the PEDOT:PSS, and a surface modification region proximate to the light emitting layer and comprising the surface modification material. ### Claim 15 (depends on 14) The quantum dot device of claim 14, wherein a thickness of the surface modification region is about 1 volume percent to about 30 volume percent of a total thickness of the first hole auxiliary layer. ### Claim 16 (depends on 14) The quantum dot device of claim 14, wherein a thickness of the surface modification region is greater than or equal to about 1 nanometers and less than about 10 nanometers. ### Claim 17 (depends on 11) The quantum dot device of claim 11, wherein the surface modification material is represented by Chemical Formula 1: wherein, in Chemical Formula 1, Ar is a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, or any combination thereof, L is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C3 to C20 heteroarylene group, or any combination thereof, and R′ is a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. ### Claim 18 (depends on 17) The quantum dot device of claim 17, wherein Ar is a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, or any combination thereof. ### Claim 19 (depends on 11) The quantum dot device of claim 11, further comprising a second hole auxiliary layer disposed between the first hole auxiliary layer and the light emitting layer and comprising a hole transport material different from the PEDOT:PSS, wherein a HOMO energy level of the surface modification material is deeper than a HOMO energy level of the PEDOT:PSS and shallower than a HOMO energy level of the hole transport material, and a HOMO energy level of the quantum dots is deeper than a HOMO energy level of the hole transport material. ### Claim 20 (depends on 11) An electronic device comprising the quantum dot device of claim 11.