# US 12,225,739 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,739 B2 - Document ID: US12225739B2 - Status: Granted - Kind: B2 - Application number: 18/626,592 - Filed: 2024-04-04 - Published: 2024-07-25 - Granted: 2025-02-11 - Earliest claimed: 2011-09-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Tatsuya Honda; Masashi Tsubuku; Yusuke Nonaka; Takashi Shimazu; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US12225739B2 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)} - G02F 1/1337: Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers - G02F 1/13394: {spacers regularly patterned on the cell subtrate, e.g. walls, pillars (G02F1/133377 takes precedence)} - G02F 1/134309: {characterised by their geometrical arrangement} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 62/405: {Orientations of crystalline planes} - H10D 62/80: characterised by the materials - H10D 64/68: characterised by the insulator, e.g. by the gate insulator - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - G02F 2202/10: semiconductor - H10K 59/1213: {the pixel elements being TFTs} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion. ## Claims ### Claim 1 A semiconductor device comprising: an insulating film; a gate electrode; an oxide semiconductor film; a source electrode; and a drain electrode, wherein the oxide semiconductor film comprises an indium oxide film, wherein the indium oxide film comprises a first region and a second region, wherein a concentration of silicon in the second region is lower than a concentration of silicon in the first region, wherein a concentration of carbon in the first region is lower than or equal to 1.0×1020 atoms/cm3, and wherein the indium oxide film comprises a crystal portion. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the indium oxide film comprises a channel formation region. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor device further comprises a driver circuit portion and a pixel portion, and wherein one of the driver circuit portion and the pixel portion comprises the insulating film, the gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein a thickness of the indium oxide film is greater than 5 nm and less than or equal to 200 nm. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the indium oxide film is provided over a surface with an average surface roughness (Ra) less than or equal to 0.15 nm. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the concentration of carbon in the first region is lower than or equal to 1.0×1019 atoms/cm3. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the crystal portion is single crystal. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the insulating film comprises silicon. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the insulating film comprises at least one of gallium oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, yttrium oxide, lanthanum oxide, and silicon nitride oxide. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the insulating film comprises at least one of hafnium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, and hafnium aluminate. ### Claim 11 A semiconductor device comprising: an insulating film; a gate electrode; an oxide semiconductor film; a source electrode; and a drain electrode, wherein the oxide semiconductor film comprises an indium oxide film, wherein the indium oxide film comprises a first region and a second region, wherein the first region is provided to be in contact with the insulating film and has a thickness less than or equal to 5 nm, wherein a concentration of silicon in the second region is lower than a concentration of silicon in the first region, wherein a concentration of carbon in the first region is lower than or equal to 1.0×1020 atoms/cm3, and wherein the indium oxide film comprises a crystal portion. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the indium oxide film comprises a channel formation region. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the semiconductor device further comprises a driver circuit portion and a pixel portion, and wherein one of the driver circuit portion and the pixel portion comprises the insulating film, the gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode. ### Claim 14 (depends on 11) The semiconductor device according to claim 11, wherein a thickness of the indium oxide film is greater than 5 nm and less than or equal to 200 nm. ### Claim 15 (depends on 11) The semiconductor device according to claim 11, wherein the indium oxide film is provided over a surface with an average surface roughness (Ra) less than or equal to 0.15 nm. ### Claim 16 (depends on 11) The semiconductor device according to claim 11, wherein the concentration of carbon in the first region is lower than or equal to 1.0×1019 atoms/cm3. ### Claim 17 (depends on 11) The semiconductor device according to claim 11, wherein the crystal portion is single crystal. ### Claim 18 (depends on 11) The semiconductor device according to claim 11, wherein the insulating film comprises silicon. ### Claim 19 (depends on 11) The semiconductor device according to claim 11, wherein the insulating film comprises at least one of gallium oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, yttrium oxide, lanthanum oxide, and silicon nitride oxide. ### Claim 20 (depends on 11) The semiconductor device according to claim 11, wherein the insulating film comprises at least one of hafnium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, and hafnium aluminate.