# US 12,225,719 B2 · Semiconductor storage device

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- Number: US 12,225,719 B2
- Document ID: US12225719B2
- Status: Granted
- Kind: B2
- Application number: 17/524,369
- Filed: 2021-11-11
- Published: 2022-03-03
- Granted: 2025-02-11
- Earliest claimed: 2019-05-13
- Assignees: Socionext Inc.
- Applicants: Socionext Inc.
- Inventors: Yasumitsu Sakai
- Web page: https://patentgrep.com/patent/US12225719B2

## CPC

- H10B 20/50: {having transistors on different levels, e.g. 3D ROM}
- H10B 20/34: {Source electrode or drain electrode programmed}
- H10D 30/43: having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
- H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/121: {oriented parallel to substrates}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/851: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 88/00: Three-dimensional [3D] integrated devices
- H10D 88/01: {Manufacture or treatment}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/501: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 84/8311: {the IGFETs characterised by having different channel structures}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A ROM cell includes first and second three-dimensional transistors. The second transistor is formed above the first transistor, and the channel portions of the first and second transistors overlap each other. First data is stored depending on whether first and second local interconnects connected to the nodes of the first transistor are connected to a same line, or different lines, out of a bit line and a ground power supply line. Second data is stored depending on whether third and fourth local interconnects connected to the nodes of the second transistor are connected to a same line, or different lines, out of a bit line and a ground power supply line.

## Claims

### Claim 1

A semiconductor storage device provided with a read only memory (ROM) cell, comprising:
a word line extending in a first direction parallel to a substrate plane;
first and second bit lines extending in a second direction parallel to the substrate plane and perpendicular to the first direction; and
a ground power supply line extending in the second direction, wherein:
the ROM cell includes:
a first nanowire field effect transistor (FET) provided between the first bit line and the ground power supply line, a second nanowire FET provided between the second bit line and the ground power supply line, formed above the first nanowire FET, nanowires as channel portions of the first and second nanowire FET extending in the second direction and overlapping each other as viewed in plan, a first local interconnect connected to a source of the first nanowire FET and connected to the first bit line or the ground power supply line, a second local interconnect connected to a drain of the first nanowire FET and connected to the first bit line or the ground power supply line, a third local interconnect connected to a source of the second nanowire FET and connected to the second bit line or the ground power supply line, and a fourth local interconnect connected to a drain of the second nanowire FET and connected to the second bit line or the ground power supply line, gates of the first and second nanowire FETs are connected to the word line, and first data is stored in the ROM cell depending on whether the first and second local interconnects are connected to a same line, or different lines, out of the first bit line and the ground power supply line, and second data is stored in the ROM cell depending on whether the third and fourth local interconnects are connected to a same line, or different lines, out of the second bit line and the ground power supply line; and
wherein the first, second, third and fourth local interconnects extend in the first direction, the first and third local interconnects overlap each other as viewed in plan, and the second and fourth local interconnects overlap each other as viewed in plan.

### Claim 2 (depends on 1)

The semiconductor storage device of claim 1, wherein the first and second local interconnects overlap the first bit line and the ground power supply line as viewed in plan, and the third and fourth local interconnects overlap the second bit line and the ground power supply line as viewed in plan.

### Claim 3 (depends on 1)

The semiconductor storage device of claim 1, wherein the ROM cell includes a gate interconnect that extends in the first direction and also in a depth direction, is to be the gates of the first and second nanowire FETs, and is connected with the word line.

### Claim 4 (depends on 1)

The semiconductor storage device of claim 1, wherein the first nanowire FET includes N (N is an integer equal to or greater than 2) transistors lying side by side in the first direction and sharing a source and a drain, and the second nanowire FET includes N transistors lying side by side in the first direction and sharing a source and a drain.

### Claim 5 (depends on 1)

The semiconductor storage device of claim 1, wherein the ground power supply line is a buried power rail.

### Claim 6 (depends on 1)

The semiconductor storage device of claim 1, wherein the ground power supply line is a line formed in a same layer as the first and second bit lines.