# US 12,225,717 B2 · Semiconductor device with dielectric structure having enlargemant portion surrounding word line

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- Number: US 12,225,717 B2
- Document ID: US12225717B2
- Status: Granted
- Kind: B2
- Application number: 18/470,446
- Filed: 2023-09-20
- Published: 2024-01-11
- Granted: 2025-02-11
- Earliest claimed: 2022-01-06
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Chung-Lin Huang
- Web page: https://patentgrep.com/patent/US12225717B2

## CPC

- H10B 12/488: {Word lines}
- H10B 12/053: {the transistor being at least partially in a trench in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383)}
- H10B 12/34: {the transistor being at least partially in a trench in the substrate}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a substrate, a passing word line in the substrate, and a dielectric structure surrounding the passing word line. The dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a passing word line in the substrate; and
a dielectric structure surrounding the passing word line, wherein the dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure, the enlargement portion comprises a top portion and a bottom portion meeting at the maximum width of the enlargement portion, a width of the top portion of the enlargement portion of the dielectric structure gradually increases downward to the maximum width, and a width of the bottom portion of the enlargement portion of the dielectric structure gradually decreases, and wherein the top portion of the enlargement portion of the dielectric structure is in contact with the substrate.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric structure has a sidewall substantially vertical to the top of the dielectric structure, and the sidewall expands outwards at a height above a bottom of the passing word line, and the height is about 10 nm to about 20 nm above the bottom of the passing word line.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the maximum width of the enlargement portion of the dielectric structure is about 1 nm to about 10 nm wider than the width of the top of the dielectric structure.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the bottom of the passing word line is substantially leveled with the enlargement portion at the maximum width.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the top of the dielectric structure gets wider toward the bottom of the dielectric structure.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, further comprising an active word line adjacent to the dielectric structure, wherein the active word line is separated from the dielectric structure by the substrate.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising a dielectric layer over the passing word line.