# US 12,225,305 B2 · Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,305 B2 - Document ID: US12225305B2 - Status: Granted - Kind: B2 - Application number: 17/779,319 - Filed: 2020-12-02 - Published: 2023-03-02 - Granted: 2025-02-11 - Earliest claimed: 2019-12-02 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Pooria Mostafalu; Giri Mehta; Frederick Brady; Ping Wah Wong - Web page: https://patentgrep.com/patent/US12225305B2 ## CPC - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/807: {Pixel isolation structures} - H04N 25/47: Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data - H04N 25/707: Pixels for event detection - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/014: {of CMOS image sensors} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/182: {Colour image sensors} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. Each image sensing pixel includes a photoelectric conversion element and an imaging signal generation readout circuit. The image sensing readout circuit can be shared by a plurality of photoelectric conversion elements. Each event detection pixel includes a photoelectric conversion element and an event detection readout circuit. The event detection readout circuit can be shared by a plurality of photoelectric conversion elements. In addition, the photoelectric conversion element of an event detection pixel can be selectively connected to a shared imaging signal generation readout circuit. The number of image sensing pixels is greater than the number of event detection pixels. In addition, the area of a photoelectric conversion element of an event detection pixel can be greater than the area of a photoelectric conversion element of an image sensing pixel. ## Claims ### Claim 1 A sensor, comprising: a pixel array unit, wherein the pixel array unit includes: a plurality of event detection pixels, the plurality of event detection pixels including a first pixel, the first pixel including: a first photoelectric conversion region disposed in a substrate; and a first amplifier transistor coupled to the first photoelectric conversion region; a plurality of image sensing pixels, the plurality of image sensing pixels including: a second pixel including a second photoelectric conversion region disposed in the substrate; a third pixel including a third photoelectric conversion region disposed in the substrate; and a second amplifier transistor coupled to the second and third photoelectric conversion regions; a first isolation region disposed in the substrate between the first pixel and the second pixel; and a second isolation region disposed between the second pixel and the third pixel, wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate. ### Claim 2 (depends on 1) The sensor according to claim 1, wherein the first isolation region extends deeper into the substrate than the second isolation region in the cross sectional view. ### Claim 3 (depends on 1) The sensor according to claim 1, further comprising: a plurality of image signal generation readout circuits, wherein for each photoelectric conversion region of each image sensing pixel an associated transfer transistor selectively couples the photoelectric conversion region to one of the image signal generation readout circuits. ### Claim 4 (depends on 3) The sensor according to claim 3, wherein each image signal generation readout circuit is shared by a group of image sensing pixels. ### Claim 5 (depends on 4) The sensor according to claim 4, further comprising: a plurality of event detection readout circuits, wherein each photoelectric conversion region of each event detection pixel is coupled to one of the event detection readout circuits. ### Claim 6 (depends on 5) The sensor according to claim 5, further comprising: a plurality of second image signal generation readout circuits, wherein each event detection pixel further includes a transfer transistor, and wherein for each photoelectric conversion region of each event detection pixel the associated transfer transistor selectively couples the photoelectric conversion region to one of the event detection readout circuits. ### Claim 7 (depends on 6) The sensor according to claim 6, wherein each second image signal generation readout circuit is shared by multiple event detection pixels. ### Claim 8 (depends on 7) The sensor according to claim 7, wherein each event detection readout circuit is shared by multiple event detection pixels. ### Claim 9 (depends on 8) The sensor according to claim 8, wherein the plurality of image sensing pixels includes a first number of image sensing pixels, wherein the plurality of event detection pixels includes a second number of event detection pixels, and wherein the first number is greater than the second number. ### Claim 10 (depends on 9) The sensor according to claim 9, wherein an area of the photoelectric conversion region of each event detection pixel is greater than an area of the photoelectric conversion region of each image sensing pixel. ### Claim 11 (depends on 9) The sensor according to claim 9, wherein the first number is at least three times greater than the second number. ### Claim 12 (depends on 1) The sensor according to claim 1, wherein the plurality of image sensing pixels includes a first number of image sensing pixels, wherein the plurality of event detection pixels includes a second number of event detection pixels, and wherein the first number is greater than the second number. ### Claim 13 (depends on 12) The sensor according to claim 12, wherein an area of each event detection pixel is greater than an area of each image sensing pixel. ### Claim 14 (depends on 12) The sensor according to claim 12, wherein an area of a photoelectric conversion region of each event detection pixel is greater than an area of a photoelectric conversion region of each image sensing pixel. ### Claim 15 (depends on 12) The sensor according to claim 12, wherein the first number is at least three times greater than the second number. ### Claim 16 (depends on 1) The sensor according to claim 1, wherein each event detection pixel is surrounded by a full thickness trench isolation structure. ### Claim 17 (depends on 1) The sensor according to claim 1, wherein each image sensing pixel is separated from an adjacent image sensing pixel by a deep trench isolation structure. ### Claim 18 (depends on 17) The sensor according to claim 17, wherein each event detection pixel is separated from an adjacent event detection pixel by a deep trench isolation structure. ### Claim 19 (depends on 18) The sensor according to claim 18, wherein each event detection pixel is separated from an adjacent image sensing pixel by a full thickness trench isolation structure. ### Claim 20 An electronic apparatus, comprising: an imaging lens; and a solid-state imaging device, including: at least one pixel array unit, wherein the pixel array unit includes: a plurality of event detection pixels, the plurality of event detection pixels including: a first photoelectric conversion region disposed in a substrate; and a first amplifier transistor; a plurality of image sensing pixels, the plurality of image sensing pixels including: a second photoelectric conversion region disposed in the substrate; a third photoelectric conversion region disposed in the substrate; and a second amplifier transistor coupled to the second and third photoelectric conversion regions; a first isolation region disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region; and a second isolation region disposed in the substrate between the second photoelectric conversion region and the third photoelectric conversion region wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate; and a control unit, wherein the control unit controls operation of the solid-state imaging device. ### Claim 21 A method, comprising: providing a pixel array unit, wherein the pixel array unit includes: a plurality of event detection pixels, the plurality of event detection pixel including: a first photoelectric conversion region disposed in a substrate; and a first amplifier transistor; a plurality of image sensing pixels, the plurality of image sensing pixels including: a second photoelectric conversion region disposed in the substrate; a third photoelectric conversion region disposed in the substrate; and a second amplifier transistor coupled to the second and third photoelectric conversion regions; a first isolation region disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region; and a second isolation region disposed in the substrate between the second photoelectric conversion region and the third photoelectric conversion region, wherein, in a cross sectional view, the first isolation region and the second isolation region extend to different depths within the substrate.