# US 12,225,273 B2 · Image sensor and control method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,225,273 B2 - Document ID: US12225273B2 - Status: Granted - Kind: B2 - Application number: 18/323,915 - Filed: 2023-05-25 - Published: 2024-02-01 - Granted: 2025-02-11 - Earliest claimed: 2022-07-26 - Assignees: VisEra Technologies Company Limited - Applicants: VisEra Technologies Company Ltd. - Inventors: Lai-Hung Lai; Wen-Yu Shih; Chin-Chuan Hsieh - Web page: https://patentgrep.com/patent/US12225273B2 ## CPC - H04N 23/11: for generating image signals from visible and infrared light wavelengths - H10F 39/805: {Coatings} - H04N 23/12: with one sensor only - H04N 23/667: Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes - H04N 25/135: {based on four or more different wavelength filter elements} - H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors - H10F 39/192: {Colour image sensors} - H10F 39/8063: {Microlenses} - H10K 39/32: Organic image sensors - H10F 39/8053: {Colour filters} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer. ## Claims ### Claim 1 An image sensor, comprising: a first transparent conductive layer; a second conductive layer; and an optical sensor arranged between the first transparent conductive layer and the second conductive layer, and comprising a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges; and a semiconductor substrate below the second conductive layer. ### Claim 2 (depends on 1) The image sensor of claim 1, further comprising a polymer layer arranged below the first transparent conductive layer, wherein the polymer layer is configured to filter out a visible light with a wavelength range between 400-650 nm. ### Claim 3 (depends on 1) The image sensor of claim 1, further comprising a microlens layer over the first transparent conductive layer. ### Claim 4 (depends on 3) The image sensor of claim 3, further comprising a multilayer film filter layer over the microlens layer, wherein the multilayer film filter layer is configured to filter out a visible light with a wavelength range between 400-800 nm. ### Claim 5 (depends on 4) The image sensor of claim 4, wherein the multilayer film filter layer is arranged over the microlens layer via a low refractive index material. ### Claim 6 (depends on 3) The image sensor of claim 3, further comprising a protection layer arranged between the microlens layer and the first transparent conductive layer, wherein the protection layer comprises an oxide material, a nitride material, an oxynitride material or a combination thereof. ### Claim 7 (depends on 6) The image sensor of claim 6, further comprising a color filter array layer arranged between the microlens layer and the protection layer, wherein the color filter array layer comprises a red color filter, a green color filter, a blue color filter and a broadband filter. ### Claim 8 (depends on 1) The image sensor of claim 1, wherein the optical sensor further comprises a first carrier transporting layer, and the first carrier transporting layer is arranged between the first transparent conductive layer and the photoelectric conversion layer. ### Claim 9 (depends on 8) The image sensor of claim 8, wherein the optical sensor further comprises a second carrier transporting layer, and the second carrier transporting layer is arranged between the photoelectric conversion layer and the second conductive layer. ### Claim 10 (depends on 1) The image sensor of claim 1, wherein the semiconductor substrate comprises a pixel circuit electrically coupled to the second conductive layer, and the pixel circuit is configured to output an output signal according to a current signal generated by the optical sensor. ### Claim 11 (depends on 1) The image sensor of claim 1, wherein the optical sensor is configured to receive a bias voltage via the first transparent conductive layer, and the optical sensor is controlled in one of the plurality of absorption spectrum ranges according to a voltage level of the bias voltage. ### Claim 12 (depends on 1) The image sensor of claim 1, wherein the plurality of absorption spectrum ranges comprises a first absorption spectrum range; wherein when the optical sensor is controlled in the first absorption spectrum range, the photoelectric conversion layer is configured to absorb a first light with a first wavelength range, and is configured to generate a first current signal corresponding to the first light; wherein a peak wavelength of the first wavelength range is 940, 1100, 1310, 1350, 1400, 1450, or 1550 nm. ### Claim 13 (depends on 12) The image sensor of claim 12, wherein the plurality of absorption spectrum ranges comprises a second absorption spectrum range; wherein when the optical sensor is controlled in the second absorption spectrum range, the photoelectric conversion layer is configured to absorb a second light with a second wavelength range, and is configured to generate a second current signal corresponding to the second light; wherein the second wavelength range is between 400-940 nm, 400-1100 nm, 400-1310 nm, 400-1350 nm, 400-1400 nm, 400-1450 nm, or 400-1550 nm. ### Claim 14 (depends on 12) The image sensor of claim 12, wherein the plurality of absorption spectrum ranges comprises a third absorption spectrum range; wherein when the optical sensor is controlled in the third absorption spectrum range, the photoelectric conversion layer is configured to absorb a third light with a third wavelength range and is configured to generate a third current signal corresponding to the third light; wherein the third wavelength range is between 650-940 nm, 650-1100 nm, 650-1310 nm, 650-1350 nm, 650-1400 nm, 650-1450 nm, 650-1550 nm, 800-940 nm, 800-1100 nm, 800-1310 nm, 800-1350 nm, 800-1400 nm, 800-1450 nm, or 800-1550 nm. ### Claim 15 A control method of image sensor, wherein the image sensor comprises an optical sensor, and the control method comprises: determining to operate the image sensor in one of a plurality of operation modes; adjusting a bias voltage applied to the optical sensor to a first voltage level when the image sensor is determined to operate in a narrowband mode of the plurality of operation modes, so that the optical sensor has a first absorption spectrum range; and adjusting the bias voltage to a second voltage level different from the first voltage level when the image sensor is determined to operate in a broadband mode or a wideband mode of the plurality of operation modes, so that the optical sensor has a second absorption spectrum range or a third absorption spectrum range, wherein the second absorption spectrum range and the third absorption spectrum range both are wider than the first absorption spectrum range. ### Claim 16 (depends on 15) The control method of claim 15, wherein when the image sensor is operated in the narrowband mode, the optical sensor absorbs a first light according to the first absorption spectrum range, wherein the first light is a near-infrared (NIR) light, a shortwave infrared (SWIR) light, or a combination thereof. ### Claim 17 (depends on 15) The control method of claim 15, wherein when the image sensor is operated in the broadband mode, the optical sensor absorbs a second light according to the second absorption spectrum range, wherein the second light is an ultraviolet (UV) light, a visible light, a near-infrared (NIR) light, a shortwave infrared (SWIR) light, or a combination thereof. ### Claim 18 (depends on 17) The control method of claim 17, wherein the second absorption spectrum range is between 400-940 nm, 400-1100 nm, 400-1310 nm, 400-1350 nm, 400-1400 nm, 400-1450 nm, or 400-1550 nm. ### Claim 19 (depends on 15) The control method of claim 15, wherein when the image sensor is operated in the wideband mode, the optical sensor absorbs a third light according to the third absorption spectrum range, wherein the third light is a visible light, a near-infrared (NIR) light, a shortwave infrared (SWIR) light, or a combination thereof. ### Claim 20 (depends on 18) The control method of claim 18, wherein the third absorption spectrum range is between 650-940 nm, 650-1100 nm, 650-1310 nm, 650-1350 nm, 650-1400 nm, 650-1450 nm, 650-1550 nm, 800-940 nm, 800-1100 nm, 800-1310 nm, 800-1350 nm, 800-1400 nm, 800-1450 nm, or 800-1550 nm.