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US 12,224,740 B2Granted
Load switch including back-to-back connected transistors
AssigneeNuvolta Technoloiges (Heifei) Co., Ltd.
InventorsJinbiao Huang, John Lin
Life of this patent
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Abstract
An apparatus includes a first drain/source region and a second drain/source region over a substrate, and a first gate adjacent to the first drain/source region, a second gate adjacent to the second drain/source region and a third gate between the first gate and the second gate, wherein the first drain/source region, the second drain/source region, the first gate, the second gate and the third gate form two back-to-back connected transistors.
Claims12
A method comprising:
- in an off-state of a load switch comprising two back-to-back connected transistors including a first gate, a second gate and a third gate formed over and in direct contact with a continuous dielectric layer, connecting the first gate and the second gate of the two back-to-back connected transistors to a first voltage potential lower than turn-on thresholds of the two back-to-back connected transistors, and connecting the third gate to a first source of the two back-to-back connected transistors;
- and
- in an on-state of the load switch, connecting the first gate and the second gate of the two back-to-back connected transistors to a second voltage potential higher than the turn-on thresholds of the two back-to-back connected transistors, and connecting the third gate to a third voltage potential higher than the turn-on thresholds of the two back-to-back connected transistors.
A controller comprising:
- a first gate driver configured to apply a first voltage potential to a first gate of a load switch in an off-state of the load switch, and apply a second voltage potential to the first gate of the load switch in an on-state of the load switch, wherein the first voltage potential is lower than a turn-on threshold of a first switch of the load switch, and the second voltage potential is higher than the turn-on threshold of the first switch of the load switch;
- a second gate driver configured to apply the first voltage potential to a second gate of the load switch in the off-state of the load switch, and apply the second voltage potential to the second gate of the load switch in the on-state of the load switch;
- and
- a third gate driver configured to connect a third gate of the load switch to a first source of the load switch in the off-state of the load switch, and apply a third voltage potential to the third gate of the load switch in the on-state of the load switch, wherein the third voltage potential is higher than the turn-on threshold of the first switch of the load switch, wherein the first gate, the second gate and the third gate are formed over and in direct contact with a continuous dielectric layer.
1 more element
Dependencies are inferred from the claim text.